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5961-00-249-6016
20 Products
110-65-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002496016
NSN
5961-00-249-6016
MFG
AVIONICS SPECIALTIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE
~1: VOLTAGE, INSTANTANEOUS
Related Searches:
33411
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493814
NSN
5961-00-249-3814
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33412
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493983
NSN
5961-00-249-3983
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33413
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493984
NSN
5961-00-249-3984
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33417
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493985
NSN
5961-00-249-3985
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33418
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493986
NSN
5961-00-249-3986
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493987
NSN
5961-00-249-3987
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33423
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493988
NSN
5961-00-249-3988
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
33426
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002493989
NSN
5961-00-249-3989
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
34209
TRANSISTOR
NSN, MFG P/N
5961002493990
NSN
5961-00-249-3990
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
FK6287D
TRANSISTOR
NSN, MFG P/N
5961002493991
NSN
5961-00-249-3991
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
4907982-00
TRANSISTOR
NSN, MFG P/N
5961002493992
NSN
5961-00-249-3992
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
4JX1C1010
TRANSISTOR
NSN, MFG P/N
5961002493992
NSN
5961-00-249-3992
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
TRANSISTOR
Related Searches:
A67017F
TRANSISTOR
NSN, MFG P/N
5961002493994
NSN
5961-00-249-3994
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
3371208
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002493998
NSN
5961-00-249-3998
3371208
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002493998
NSN
5961-00-249-3998
MFG
ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.040 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
C52U
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002493998
NSN
5961-00-249-3998
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.040 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
CD7500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002494000
NSN
5961-00-249-4000
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC GDIS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
044175
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002495997
NSN
5961-00-249-5997
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044175
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N978A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002495997
NSN
5961-00-249-5997
MFG
AMERICAN SHIZUKI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044175
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N978AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002495997
NSN
5961-00-249-5997
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044175
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
