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5961-00-252-7863
20 Products
533804-1
TRANSISTOR
NSN, MFG P/N
5961002527863
NSN
5961-00-252-7863
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 533804-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N5005
TRANSISTOR
NSN, MFG P/N
5961002527945
NSN
5961-00-252-7945
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES NOMINAL
TERMINAL LENGTH: 0.295 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-535861 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPE
Related Searches:
535861-3
TRANSISTOR
NSN, MFG P/N
5961002527945
NSN
5961-00-252-7945
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES NOMINAL
TERMINAL LENGTH: 0.295 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-535861 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPE
Related Searches:
67SH152
TRANSISTOR
NSN, MFG P/N
5961002527945
NSN
5961-00-252-7945
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES NOMINAL
TERMINAL LENGTH: 0.295 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-535861 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPE
Related Searches:
JAN2N5005
TRANSISTOR
NSN, MFG P/N
5961002527945
NSN
5961-00-252-7945
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES NOMINAL
TERMINAL LENGTH: 0.295 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-535861 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPE
Related Searches:
SP5806-3
TRANSISTOR
NSN, MFG P/N
5961002527945
NSN
5961-00-252-7945
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.110 INCHES NOMINAL
TERMINAL LENGTH: 0.295 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-535861 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPE
Related Searches:
719016-1
DIODE,MODULE
NSN, MFG P/N
5961002528010
NSN
5961-00-252-8010
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 719016-1
GENERAL CHARACTERISTICS ITEM DESCRIPTION: INCL 1 CONNECTOR,1 PROBE,1 STEP RECOVERY DIODE MODULE
MANUFACTURERS CODE: 96214
THE MANUFACTURERS DATA:
Related Searches:
5082-0300-0345
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002528013
NSN
5961-00-252-8013
5082-0300-0345
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002528013
NSN
5961-00-252-8013
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 534727-1
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
Related Searches:
534727-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002528013
NSN
5961-00-252-8013
MFG
RAYTHEON COMPANY
Description
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 534727-1
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
Related Searches:
1207480-103
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002528033
NSN
5961-00-252-8033
1207480-103
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002528033
NSN
5961-00-252-8033
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
MAJOR COMPONENTS: DIODE5; TERMINAL BOARD 1
OVERALL LENGTH: 2.125 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
Related Searches:
1210473-101
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002528034
NSN
5961-00-252-8034
1210473-101
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002528034
NSN
5961-00-252-8034
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
MAJOR COMPONENTS: DIODE 6; BOARD 1
SPECIAL FEATURES: TERMINAL BOARD P/N LS9777-1,DIODE P/N JAN1N3613
TEST DATA DOCUMENT: 36659-1210473-101 DRAWING
Related Searches:
719191-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002528037
NSN
5961-00-252-8037
719191-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002528037
NSN
5961-00-252-8037
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12500.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.119 INCHES NOMINAL
OVERALL LENGTH: 5.760 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 INSULATED WIRE LEAD
Related Searches:
16K
TRANSISTOR
NSN, MFG P/N
5961002530150
NSN
5961-00-253-0150
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
16KTRANSIST0R
TRANSISTOR
NSN, MFG P/N
5961002530150
NSN
5961-00-253-0150
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
458CDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002530153
NSN
5961-00-253-0153
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2666686
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002530674
NSN
5961-00-253-0674
2666686
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002530674
NSN
5961-00-253-0674
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
MAJOR COMPONENTS: DIODES 27; PRINTED WIRING BOARD 1
MOUNTING CONFIGURATION: THREE 0.156 IN. DIA. MTG HOLES SPACED ON 4.800 IN. BY 5.000 IN. MTG CENTERS
OVERALL HEIGHT: 0.192 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 5.200 INCHES NOMINAL
Related Searches:
325602
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002530713
NSN
5961-00-253-0713
325602
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002530713
NSN
5961-00-253-0713
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
MATERIAL: SILICON
Related Searches:
325603
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002530714
NSN
5961-00-253-0714
325603
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961002530714
NSN
5961-00-253-0714
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
MATERIAL: SILICON
Related Searches:
322MR282P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002531983
NSN
5961-00-253-1983
322MR282P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002531983
NSN
5961-00-253-1983
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.078 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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691280A4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002531986
NSN
5961-00-253-1986
691280A4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961002531986
NSN
5961-00-253-1986
MFG
ELSAG BAILEY INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
