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5961-00-336-2109
20 Products
101402-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003362109
NSN
5961-00-336-2109
101402-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003362109
NSN
5961-00-336-2109
MFG
PRINTRONIX INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 70.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.505 INCHES NOMINAL
OVERALL LENGTH: 1.381 INCHES NOMINAL
OVERALL WIDTH: 1.381 INCHES NOMINAL
SPECIAL FEATURES: ONE 0.290 IN.DIA.MTG HOLE;INCLOSURE FEATURE:ENCAPSULATED,METAL CASE AND PLASTIC CASE;LEAD TYPE:CAPACITIVE AND RSISTIVE
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
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PT6935
TRANSISTOR
NSN, MFG P/N
5961003356038
NSN
5961-00-335-6038
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: 932145-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06481
OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
76S1313
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
76S1313
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
MFG
PHOTO-SONICS INC . DIV PHOTO-SONICS
Description
DESIGN CONTROL REFERENCE: 76S1313
MANUFACTURERS CODE: 02024
SPECIAL FEATURES: SILICON BRIDGE;1.125 IN. LG;1.125 IN. W;1.00 IN. MAX H;FOUR SOLDER TERMINALS;ONE 0.193 IN. DIA MOUNTING HOLE CENTRALLY LOCATED;MINUS 55 DEG C TO PLUS 150 DEG C OPERATING TEMP RANGE;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
CS-103115-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
CS-103115-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
MFG
SELEX COMMUNICATIONS LTD
Description
DESIGN CONTROL REFERENCE: 76S1313
MANUFACTURERS CODE: 02024
SPECIAL FEATURES: SILICON BRIDGE;1.125 IN. LG;1.125 IN. W;1.00 IN. MAX H;FOUR SOLDER TERMINALS;ONE 0.193 IN. DIA MOUNTING HOLE CENTRALLY LOCATED;MINUS 55 DEG C TO PLUS 150 DEG C OPERATING TEMP RANGE;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
SCBA2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
SCBA2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356129
NSN
5961-00-335-6129
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 76S1313
MANUFACTURERS CODE: 02024
SPECIAL FEATURES: SILICON BRIDGE;1.125 IN. LG;1.125 IN. W;1.00 IN. MAX H;FOUR SOLDER TERMINALS;ONE 0.193 IN. DIA MOUNTING HOLE CENTRALLY LOCATED;MINUS 55 DEG C TO PLUS 150 DEG C OPERATING TEMP RANGE;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
76S1315
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356132
NSN
5961-00-335-6132
76S1315
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356132
NSN
5961-00-335-6132
MFG
PHOTO-SONICS INC . DIV PHOTO-SONICS
Description
DESIGN CONTROL REFERENCE: 76S1315
MANUFACTURERS CODE: 02024
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
SCAJ1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356132
NSN
5961-00-335-6132
SCAJ1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356132
NSN
5961-00-335-6132
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 76S1315
MANUFACTURERS CODE: 02024
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
76S1314
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356137
NSN
5961-00-335-6137
76S1314
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356137
NSN
5961-00-335-6137
MFG
PHOTO-SONICS INC . DIV PHOTO-SONICS
Description
DESIGN CONTROL REFERENCE: 76S1314
MANUFACTURERS CODE: 02024
MATERIAL: SILICON
OVERALL DIAMETER: 0.875 INCHES NOMINAL
OVERALL HEIGHT: 0.387 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
SCBR10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356137
NSN
5961-00-335-6137
SCBR10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003356137
NSN
5961-00-335-6137
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 76S1314
MANUFACTURERS CODE: 02024
MATERIAL: SILICON
OVERALL DIAMETER: 0.875 INCHES NOMINAL
OVERALL HEIGHT: 0.387 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
2N3538
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003357992
NSN
5961-00-335-7992
2N3538
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003357992
NSN
5961-00-335-7992
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 5.063 INCHES MAXIMUM
OVERALL LENGTH: 1.310 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4911 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
294-990121-766
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
294-990121-766
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
MFG
CMC ELECTRONICS INC
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/445
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MA
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41145-690-00-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
41145-690-00-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/445
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MA
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944467-7120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
944467-7120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/445
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MA
Related Searches:
JANTX1N5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
JANTX1N5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/445
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MA
Related Searches:
JANTX1N5712A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
JANTX1N5712A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003358934
NSN
5961-00-335-8934
MFG
ADELCO ELEKTRONIK GMBH
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/445
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 16.0 MA
Related Searches:
1854-0540
TRANSISTOR
NSN, MFG P/N
5961003361182
NSN
5961-00-336-1182
MFG
FISCHBACH AND MOORE COMMUNICATIONS DIV OF FISCHBACH AND MOORE INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
3511-013-72741
TRANSISTOR
NSN, MFG P/N
5961003361182
NSN
5961-00-336-1182
MFG
THALES OPTRONIQUE SA
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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MM8006
TRANSISTOR
NSN, MFG P/N
5961003361182
NSN
5961-00-336-1182
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N4856A
TRANSISTOR
NSN, MFG P/N
5961003362033
NSN
5961-00-336-2033
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5715 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE SUPPLY VOLTAGE AND 40.0 MAXIMUM DRAIN TO GATE VOLTAGE
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V3326Z4856X1
TRANSISTOR
NSN, MFG P/N
5961003362033
NSN
5961-00-336-2033
MFG
SIEMENS SCHWEIZ AG
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5715 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE SUPPLY VOLTAGE AND 40.0 MAXIMUM DRAIN TO GATE VOLTAGE
