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5961-00-407-1950

20 Products

2N4271

TRANSISTOR

NSN, MFG P/N

5961004071950

NSN

5961-00-407-1950

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2N4271

TRANSISTOR

NSN, MFG P/N

5961004071950

NSN

5961-00-407-1950

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5307 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER

NT402182

TRANSISTOR

NSN, MFG P/N

5961004071950

NSN

5961-00-407-1950

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NT402182

TRANSISTOR

NSN, MFG P/N

5961004071950

NSN

5961-00-407-1950

MFG

RACAL ACOUSTICS LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5307 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 175.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER

UT120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004071988

NSN

5961-00-407-1988

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UT120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004071988

NSN

5961-00-407-1988

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

153-0560-00

TRANSISTOR

NSN, MFG P/N

5961004072012

NSN

5961-00-407-2012

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153-0560-00

TRANSISTOR

NSN, MFG P/N

5961004072012

NSN

5961-00-407-2012

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

591-439

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072078

NSN

5961-00-407-2078

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591-439

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072078

NSN

5961-00-407-2078

MFG

RAYMOND CORPORATION THE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM REVERSE VOLTAGE, PEAK

901-351-011

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004072079

NSN

5961-00-407-2079

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901-351-011

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961004072079

NSN

5961-00-407-2079

MFG

RAYMOND CORPORATION THE

901-351-012

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072080

NSN

5961-00-407-2080

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901-351-012

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072080

NSN

5961-00-407-2080

MFG

RAYMOND CORPORATION THE

901-351-024

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072081

NSN

5961-00-407-2081

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901-351-024

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072081

NSN

5961-00-407-2081

MFG

RAYMOND CORPORATION THE

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 3.750 INCHES MINIMUM AND 5.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD W/TERMINAL LUG

Q62702R74F25

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072156

NSN

5961-00-407-2156

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Q62702R74F25

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072156

NSN

5961-00-407-2156

MFG

EPCOS AG

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 2.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

UT2010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072156

NSN

5961-00-407-2156

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UT2010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004072156

NSN

5961-00-407-2156

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 2.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

000-8004-656

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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000-8004-656

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

13-1235959-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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13-1235959-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

153-0591

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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153-0591

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

AUTEK SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

2N5911

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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2N5911

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

4270-5911

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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4270-5911

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

GENRAD INC

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

928157-1B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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928157-1B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

SES455

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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SES455

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

SEMITRONICS CORP

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

SF93070

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

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SF93070

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961004072157

NSN

5961-00-407-2157

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

DESIGN CONTROL REFERENCE: 928157-1B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 82577
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
THE MANUFACTURERS DATA:

1855-0025

TRANSISTOR

NSN, MFG P/N

5961004072370

NSN

5961-00-407-2370

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1855-0025

TRANSISTOR

NSN, MFG P/N

5961004072370

NSN

5961-00-407-2370

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE VOLTAGE

1855-0025-1

TRANSISTOR

NSN, MFG P/N

5961004072370

NSN

5961-00-407-2370

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1855-0025-1

TRANSISTOR

NSN, MFG P/N

5961004072370

NSN

5961-00-407-2370

MFG

HEWLETT PACKARD CO

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM GATE TO SOURCE VOLTAGE