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5961-00-443-1434
20 Products
Z1222
TRANSISTOR
NSN, MFG P/N
5961004431434
NSN
5961-00-443-1434
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
DESIGN CONTROL REFERENCE: Z1222
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12255
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.334 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIAL TEST FEATURES: NAVORD OD41152
TERMINAL LENGTH: 1.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 WIRE WRAP
Related Searches:
1N2069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004431474
NSN
5961-00-443-1474
MFG
L-3 COMMUNICATIONS CORPORATION
Description
SPECIAL FEATURES: 2 TERMINALS
Related Searches:
24800006
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
24800006
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
MFG
BLASS ANTENNA ELECTRONICS CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: KBPC106
MANUFACTURERS CODE: 60644
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 4-40 THD BY 0.250 IN.LG AIAL MTG STUD;INCLOSURE FEATURE:EPOXY RESIN CASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
FWBTS3002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
FWBTS3002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
MFG
ERIE SPECIALTY PRODUCTS INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: KBPC106
MANUFACTURERS CODE: 60644
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 4-40 THD BY 0.250 IN.LG AIAL MTG STUD;INCLOSURE FEATURE:EPOXY RESIN CASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
KBPC106
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
KBPC106
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431502
NSN
5961-00-443-1502
MFG
CONDITIONING SEMICONDUCTOR DEVICES CORP /CSDC/
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: KBPC106
MANUFACTURERS CODE: 60644
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SPECIAL FEATURES: ONE NO. 4-40 THD BY 0.250 IN.LG AIAL MTG STUD;INCLOSURE FEATURE:EPOXY RESIN CASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
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24800007
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431503
NSN
5961-00-443-1503
24800007
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431503
NSN
5961-00-443-1503
MFG
BLASS ANTENNA ELECTRONICS CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: SUBMARINE COMMUNICATIONS AND ANTENNA SYSTEMS. AN/WRR-7 COMMUNICATIONS SYSSTEM.
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:EPOXY RESIN CASE;ONE NO.4-40 THD BY 0.250 IN.LG AXIAL STUD
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
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FWBTS3001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431503
NSN
5961-00-443-1503
FWBTS3001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004431503
NSN
5961-00-443-1503
MFG
MURATA ERIE NORTH AMERICA INC DIVOF MURATA ERIE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: SUBMARINE COMMUNICATIONS AND ANTENNA SYSTEMS. AN/WRR-7 COMMUNICATIONS SYSSTEM.
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:CORROSION;INCLOSURE FEATURE:EPOXY RESIN CASE;ONE NO.4-40 THD BY 0.250 IN.LG AXIAL STUD
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
10-381488
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004431827
NSN
5961-00-443-1827
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - PHOENIX SKY HARBOR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LUG,STUD 1 TERMINAL
Related Searches:
IN1614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004431827
NSN
5961-00-443-1827
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LUG,STUD 1 TERMINAL
Related Searches:
T507054074AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004432116
NSN
5961-00-443-2116
T507054074AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004432116
NSN
5961-00-443-2116
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
DESIGN CONTROL REFERENCE: T507054074AA
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 05277
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
007-0144-00
TRANSISTOR
NSN, MFG P/N
5961004432808
NSN
5961-00-443-2808
MFG
DRS ICAS, LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
007-T-0144-00
TRANSISTOR
NSN, MFG P/N
5961004432808
NSN
5961-00-443-2808
MFG
SELEX GALILEO LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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056-020
TRANSISTOR
NSN, MFG P/N
5961004432808
NSN
5961-00-443-2808
MFG
INFICON INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
345-272-004
TRANSISTOR
NSN, MFG P/N
5961004432808
NSN
5961-00-443-2808
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
MFE3003
TRANSISTOR
NSN, MFG P/N
5961004432808
NSN
5961-00-443-2808
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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2N2632
TRANSISTOR
NSN, MFG P/N
5961004433827
NSN
5961-00-443-3827
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.567 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COLLECTOR TERMINAL OPTIONAL; JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3951 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER
Related Searches:
1N2547
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004433845
NSN
5961-00-443-3845
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.079 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7210068-001
TRANSISTOR
NSN, MFG P/N
5961004433944
NSN
5961-00-443-3944
MFG
COHU INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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729061
TRANSISTOR
NSN, MFG P/N
5961004433953
NSN
5961-00-443-3953
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
DESIGN CONTROL REFERENCE: 729061
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 16758
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
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1N2971
SEMICONDUCTOR
NSN, MFG P/N
5961004433958
NSN
5961-00-443-3958
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR
