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5961-01-347-4258

20 Products

10-378742-8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013474258

NSN

5961-01-347-4258

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10-378742-8

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013474258

NSN

5961-01-347-4258

MFG

UNISON INDUSTRIES LLC

52671

TRANSISTOR

NSN, MFG P/N

5961013474406

NSN

5961-01-347-4406

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52671

TRANSISTOR

NSN, MFG P/N

5961013474406

NSN

5961-01-347-4406

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 52671
III END ITEM IDENTIFICATION: LAMPS (LIGHT AIRBORNE MULTIPURPOSE SYS)
MANUFACTURERS CODE: 98853
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
THE MANUFACTURERS DATA:

134020PC31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013474407

NSN

5961-01-347-4407

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134020PC31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013474407

NSN

5961-01-347-4407

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 134403-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

6374769

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013474550

NSN

5961-01-347-4550

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6374769

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013474550

NSN

5961-01-347-4550

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 6374769
MAJOR COMPONENTS: PWB 1,SEMICONDUCTOR DEVICE DIODE 8
MANUFACTURERS CODE: 53711
THE MANUFACTURERS DATA:

021600-1440

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013475025

NSN

5961-01-347-5025

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021600-1440

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013475025

NSN

5961-01-347-5025

MFG

NIPPONDENSO OF LOS ANGELES INC

24408100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013475025

NSN

5961-01-347-5025

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24408100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013475025

NSN

5961-01-347-5025

MFG

DEUTZ CORPORATION

220100

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013475573

NSN

5961-01-347-5573

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220100

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013475573

NSN

5961-01-347-5573

MFG

EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES

Description

MAJOR COMPONENTS: DIODE 11
SPECIAL FEATURES: DIODES P/N 1N753A

647917-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013475686

NSN

5961-01-347-5686

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647917-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013475686

NSN

5961-01-347-5686

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5895-01-340-9279 BASE STATION,COMMUNICATION TERMINAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

BB409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013475686

NSN

5961-01-347-5686

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BB409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013475686

NSN

5961-01-347-5686

MFG

SIEMENS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5895-01-340-9279 BASE STATION,COMMUNICATION TERMINAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

151-0296-00

TRANSISTOR

NSN, MFG P/N

5961013475849

NSN

5961-01-347-5849

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151-0296-00

TRANSISTOR

NSN, MFG P/N

5961013475849

NSN

5961-01-347-5849

MFG

TEKTRONIX INC. DBA TEKTRONIX

T7SH144554DN

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475850

NSN

5961-01-347-5850

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T7SH144554DN

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475850

NSN

5961-01-347-5850

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 450.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: RADAR SET AN/MPN-14K
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.850 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEFLON TUBING OVER INSULATED WIRE LEADS
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

W212406-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475850

NSN

5961-01-347-5850

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W212406-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475850

NSN

5961-01-347-5850

MFG

SORA POWER INC.

Description

CURRENT RATING PER CHARACTERISTIC: 450.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: RADAR SET AN/MPN-14K
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.850 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TEFLON TUBING OVER INSULATED WIRE LEADS
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

T620141504DN

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475851

NSN

5961-01-347-5851

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T620141504DN

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475851

NSN

5961-01-347-5851

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: RADAR SET AN/MPN-14K
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.610 INCHES MINIMUM AND 1.650 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

W212405-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475851

NSN

5961-01-347-5851

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W212405-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013475851

NSN

5961-01-347-5851

MFG

SORA POWER INC.

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE
III END ITEM IDENTIFICATION: RADAR SET AN/MPN-14K
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.610 INCHES MINIMUM AND 1.650 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

MJ10022

TRANSISTOR

NSN, MFG P/N

5961013477405

NSN

5961-01-347-7405

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MJ10022

TRANSISTOR

NSN, MFG P/N

5961013477405

NSN

5961-01-347-7405

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 6.4 MILLIMETERS MINIMUM AND 11.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 39.69 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.16 MILLIMETERS MINIMUM AND 26.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER_!!

158888-001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

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158888-001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

MFG

ASTRONAUTICS CORPORATION OF AMERICA

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON

S6A380X

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

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S6A380X

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON

SA11184-HR2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

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SA11184-HR2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013477487

NSN

5961-01-347-7487

MFG

SEMTECH CORPORATION

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON

741C5040-38-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013477851

NSN

5961-01-347-7851

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741C5040-38-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013477851

NSN

5961-01-347-7851

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

Description

DESIGN CONTROL REFERENCE: 741C5040-38-120
III END ITEM IDENTIFICATION: F-14 ACFT
MANUFACTURERS CODE: 86360
THE MANUFACTURERS DATA:

SR1665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013477852

NSN

5961-01-347-7852

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SR1665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013477852

NSN

5961-01-347-7852

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 04713-SR1665 MANUFACTURERS STANDARD