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5961-00-467-7686
20 Products
1S4039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004677686
NSN
5961-00-467-7686
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40-666-3184
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004677686
NSN
5961-00-467-7686
40-666-3184
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004677686
NSN
5961-00-467-7686
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
415-4-05830-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678378
NSN
5961-00-467-8378
415-4-05830-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678378
NSN
5961-00-467-8378
MFG
EATON AEROSPACE LTD
Description
DESIGN CONTROL REFERENCE: BZY88C7V5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 52361
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9330-093-10112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678378
NSN
5961-00-467-8378
9330-093-10112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678378
NSN
5961-00-467-8378
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
DESIGN CONTROL REFERENCE: BZY88C7V5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 52361
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
22-1817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678379
NSN
5961-00-467-8379
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZY88C12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004678379
NSN
5961-00-467-8379
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
157056A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004679224
NSN
5961-00-467-9224
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28821-263
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004679224
NSN
5961-00-467-9224
MFG
FERRANTI TECHNOLOGIES LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
415-4-98100-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004679224
NSN
5961-00-467-9224
415-4-98100-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004679224
NSN
5961-00-467-9224
MFG
EATON AEROSPACE LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28256-212-7
SEMICONDUCTOR DEV
NSN, MFG P/N
5961004679303
NSN
5961-00-467-9303
MFG
ULTRA ELECTRONICS LTD CONTROLS DIVIS ION
Description
SEMICONDUCTOR DEV
Related Searches:
28256-215-1
SEMICONDUCTOR DEV
NSN, MFG P/N
5961004679303
NSN
5961-00-467-9303
MFG
BRITISH AEROSPACE NORTH AMERICA INC
Description
SEMICONDUCTOR DEV
Related Searches:
28256-250-1
SEMICONDUCTOR DEV
NSN, MFG P/N
5961004679304
NSN
5961-00-467-9304
MFG
ULTRA ELECTRONICS LTD CONTROLS DIVIS ION
Description
SEMICONDUCTOR DEV
Related Searches:
64A16A243
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004679899
NSN
5961-00-467-9899
64A16A243
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004679899
NSN
5961-00-467-9899
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: TEST SET,GUIDED WEAPONS AN/DSM-77B
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE,
Related Searches:
Z1358
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004679904
NSN
5961-00-467-9904
MFG
UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: Z1358
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TESTFEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
2N4914
TRANSISTOR
NSN, MFG P/N
5961004682126
NSN
5961-00-468-2126
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 87.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIM
Related Searches:
RELEASE 5442
TRANSISTOR
NSN, MFG P/N
5961004682126
NSN
5961-00-468-2126
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 87.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIM
Related Searches:
KS16986L2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004682666
NSN
5961-00-468-2666
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
DESIGN CONTROL REFERENCE: KS16986L2M
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 64959
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
KS16986L2M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004682666
NSN
5961-00-468-2666
KS16986L2M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004682666
NSN
5961-00-468-2666
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
DESIGN CONTROL REFERENCE: KS16986L2M
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 64959
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
16J
TRANSISTOR
NSN, MFG P/N
5961004682669
NSN
5961-00-468-2669
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 23.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
16JTRANSIST0R
TRANSISTOR
NSN, MFG P/N
5961004682669
NSN
5961-00-468-2669
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 23.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
