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5961-01-290-0620
20 Products
040--21331-16
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900620
NSN
5961-01-290-0620
040--21331-16
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900620
NSN
5961-01-290-0620
MFG
KATO ENGINEERING INC.
Description
MAJOR COMPONENTS: DIODE 6; TERMINAL STRIP 1
Related Searches:
15-16288-00
TRANSISTOR
NSN, MFG P/N
5961012900819
NSN
5961-01-290-0819
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
VN67AF
TRANSISTOR
NSN, MFG P/N
5961012900929
NSN
5961-01-290-0929
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.155 INCHES NOMINAL
OVERALL LENGTH: 1.246 INCHES NOMINAL
OVERALL WIDTH: 0.380 INCHES NOMINAL
TERMINAL LENGTH: 0.446 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
13280698
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900997
NSN
5961-01-290-0997
13280698
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900997
NSN
5961-01-290-0997
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MAJOR COMPONENTS: PWB 1,LIGHT EMITTING DIODE 2; LAMP 1
Related Searches:
2882525-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900997
NSN
5961-01-290-0997
2882525-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012900997
NSN
5961-01-290-0997
MFG
RAYTHEON COMPANY
Description
MAJOR COMPONENTS: PWB 1,LIGHT EMITTING DIODE 2; LAMP 1
Related Searches:
334839
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901263
NSN
5961-01-290-1263
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.303 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
1N5248B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901264
NSN
5961-01-290-1264
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
5548862
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901264
NSN
5961-01-290-1264
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MMAD1109P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012901265
NSN
5961-01-290-1265
MMAD1109P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012901265
NSN
5961-01-290-1265
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SO-14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.068 INCHES MAXIMUM
OVERALL LENGTH: 0.244 INCHES MAXIMUM
OVERALL WIDTH: 0.196 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.084 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
5550438
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012901279
NSN
5961-01-290-1279
5550438
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012901279
NSN
5961-01-290-1279
MFG
NATIONAL OILWELL VARCO INC DBA NATIONAL OILWELL
Description
MAJOR COMPONENTS: DIODE 3; TERMINAL BOARD 1
Related Searches:
75560 ITEM 176
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012901279
NSN
5961-01-290-1279
75560 ITEM 176
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012901279
NSN
5961-01-290-1279
MFG
NATIONAL OIL WELL DBA IEC BAYLOR
Description
MAJOR COMPONENTS: DIODE 3; TERMINAL BOARD 1
Related Searches:
717801335-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012901446
NSN
5961-01-290-1446
717801335-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012901446
NSN
5961-01-290-1446
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
Related Searches:
137029
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012901784
NSN
5961-01-290-1784
MFG
NUCLEAR ASSOCIATES DIV VICTOREEN INC
Description
DESIGN CONTROL REFERENCE: 137029
III END ITEM IDENTIFICATION: 6525-01-161-1945
MANUFACTURERS CODE: 52320
SPECIAL FEATURES: FOR USE ON DENSITOMETER,HAND HELD,MDL 07-423
THE MANUFACTURERS DATA:
Related Searches:
1N3289RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901919
NSN
5961-01-290-1919
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3289R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION_
Related Searches:
JANTX1N3289R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901919
NSN
5961-01-290-1919
JANTX1N3289R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012901919
NSN
5961-01-290-1919
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3289R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION_
Related Searches:
233627
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012902395
NSN
5961-01-290-2395
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
TXV-3001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012903852
NSN
5961-01-290-3852
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.25 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 1.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
5016247-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012904312
NSN
5961-01-290-4312
5016247-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012904312
NSN
5961-01-290-4312
MFG
THALES TRAINING & SIMULATION LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
54115509
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012904312
NSN
5961-01-290-4312
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D4LP-44171-9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012904312
NSN
5961-01-290-4312
D4LP-44171-9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012904312
NSN
5961-01-290-4312
MFG
OKI ELECTRONICS OF AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
