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5961-00-471-2492
20 Products
1N4448F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712492
NSN
5961-00-471-2492
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 2000.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
203323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712492
NSN
5961-00-471-2492
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 2000.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DHD1105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712492
NSN
5961-00-471-2492
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 2000.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
TD8253
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712492
NSN
5961-00-471-2492
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 2000.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1855-0065
TRANSISTOR
NSN, MFG P/N
5961004712528
NSN
5961-00-471-2528
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5387 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N4891
TRANSISTOR
NSN, MFG P/N
5961004712528
NSN
5961-00-471-2528
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5387 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N4891A
TRANSISTOR
NSN, MFG P/N
5961004712528
NSN
5961-00-471-2528
MFG
ADELCO ELEKTRONIK GMBH
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5387 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
3007667-00
TRANSISTOR
NSN, MFG P/N
5961004712528
NSN
5961-00-471-2528
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5387 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N3794
TRANSISTOR
NSN, MFG P/N
5961004712669
NSN
5961-00-471-2669
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5079 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4291
TRANSISTOR
NSN, MFG P/N
5961004712677
NSN
5961-00-471-2677
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5363 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1855-0378
TRANSISTOR
NSN, MFG P/N
5961004712698
NSN
5961-00-471-2698
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, KIDD CLASS DDG, OLIVER PERRY CLASS FFG, FORRESTAL CLASS CV, TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), SEAWOLF CLASS SSN, VIRGINIA CLASS CGN (41), SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSUL
Related Searches:
SF12452
TRANSISTOR
NSN, MFG P/N
5961004712698
NSN
5961-00-471-2698
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, KIDD CLASS DDG, OLIVER PERRY CLASS FFG, FORRESTAL CLASS CV, TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), SEAWOLF CLASS SSN, VIRGINIA CLASS CGN (41), SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSUL
Related Searches:
SN2418
TRANSISTOR
NSN, MFG P/N
5961004712698
NSN
5961-00-471-2698
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, KIDD CLASS DDG, OLIVER PERRY CLASS FFG, FORRESTAL CLASS CV, TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), SEAWOLF CLASS SSN, VIRGINIA CLASS CGN (41), SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSUL
Related Searches:
1N3289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712811
NSN
5961-00-471-2811
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.270 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
6853 378-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712811
NSN
5961-00-471-2811
6853 378-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712811
NSN
5961-00-471-2811
MFG
SAAB TRAINING SYSTEMS AB
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.270 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
71-1029
SEMICONDUCTOR DEV
NSN, MFG P/N
5961004712933
NSN
5961-00-471-2933
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR DEV
Related Searches:
40-666-5063
TRANSISTOR
NSN, MFG P/N
5961004712947
NSN
5961-00-471-2947
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
ST8240
TRANSISTOR
NSN, MFG P/N
5961004712947
NSN
5961-00-471-2947
MFG
MEMEC LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
415-4-98091-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712975
NSN
5961-00-471-2975
415-4-98091-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712975
NSN
5961-00-471-2975
MFG
EATON AEROSPACE LTD
Description
DESIGN CONTROL REFERENCE: BZY88C5V6
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 52361
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9330-092-80112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712975
NSN
5961-00-471-2975
9330-092-80112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004712975
NSN
5961-00-471-2975
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
DESIGN CONTROL REFERENCE: BZY88C5V6
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 52361
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
