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5961-00-491-7303
20 Products
2N5011
TRANSISTOR
NSN, MFG P/N
5961004917303
NSN
5961-00-491-7303
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
MANUFACTURERS CODE: 89297
MFR SOURCE CONTROLLING REFERENCE: 471000C17110-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
471000C17110-1
TRANSISTOR
NSN, MFG P/N
5961004917303
NSN
5961-00-491-7303
MFG
NAVAL AIR WARFARE CENTER TRAINING SYSTEMS DIV
Description
MANUFACTURERS CODE: 89297
MFR SOURCE CONTROLLING REFERENCE: 471000C17110-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
BL-8508
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004917553
NSN
5961-00-491-7553
BL-8508
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004917553
NSN
5961-00-491-7553
MFG
BREEZE-EASTERN CORPORATION
Description
MAJOR COMPONENTS: DIODE 2
OVERALL HEIGHT: 0.656 INCHES NOMINAL
OVERALL LENGTH: 2.188 INCHES NOMINAL
OVERALL WIDTH: 0.688 INCHES NOMINAL
Related Searches:
464-034-003
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004918215
NSN
5961-00-491-8215
MFG
CMC ELECTRONICS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 87216
MFR SOURCE CONTROLLING REFERENCE: T-5056-M
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.219 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.683 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MA 47843
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004918215
NSN
5961-00-491-8215
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 87216
MFR SOURCE CONTROLLING REFERENCE: T-5056-M
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.219 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.683 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
T-5056-M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004918215
NSN
5961-00-491-8215
MFG
FORD AEROSPACE CORP ELECTRONICS DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 87216
MFR SOURCE CONTROLLING REFERENCE: T-5056-M
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.219 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.683 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
2579278-2
TRANSISTOR
NSN, MFG P/N
5961004918320
NSN
5961-00-491-8320
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1991150-115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918337
NSN
5961-00-491-8337
1991150-115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918337
NSN
5961-00-491-8337
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UZ5727
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918337
NSN
5961-00-491-8337
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1991150-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918338
NSN
5961-00-491-8338
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
UZ5806
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918338
NSN
5961-00-491-8338
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
109209-0133
TRANSISTOR
NSN, MFG P/N
5961004918892
NSN
5961-00-491-8892
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC,
Related Searches:
JAN2N3771
TRANSISTOR
NSN, MFG P/N
5961004918892
NSN
5961-00-491-8892
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC,
Related Searches:
2835217
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004918896
NSN
5961-00-491-8896
2835217
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004918896
NSN
5961-00-491-8896
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
DESIGN CONTROL REFERENCE: 2835217
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 6; TERMINAL BOARD 1
MANUFACTURERS CODE: 10001
THE MANUFACTURERS DATA:
Related Searches:
UZ7833
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918962
NSN
5961-00-491-8962
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: METAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.710 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
DZ80527E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918995
NSN
5961-00-491-8995
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2984B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA:
Related Searches:
JANTX1N2984B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918995
NSN
5961-00-491-8995
JANTX1N2984B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004918995
NSN
5961-00-491-8995
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2984B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA:
Related Searches:
048681-0001
TRANSISTOR
NSN, MFG P/N
5961004919015
NSN
5961-00-491-9015
MFG
THALES ATM INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 20.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5181 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-C
Related Searches:
3N125
TRANSISTOR
NSN, MFG P/N
5961004919015
NSN
5961-00-491-9015
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 20.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5181 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-C
Related Searches:
3NN125
TRANSISTOR
NSN, MFG P/N
5961004919015
NSN
5961-00-491-9015
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 20.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5181 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-C
