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5961-00-685-8467

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1N1375

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858467

NSN

5961-00-685-8467

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1N1375

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858467

NSN

5961-00-685-8467

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1375 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

SG213

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858472

NSN

5961-00-685-8472

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SG213

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858472

NSN

5961-00-685-8472

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

PT540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858601

NSN

5961-00-685-8601

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PT540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858601

NSN

5961-00-685-8601

MFG

GENERAL INSTRUMENT CORP COMPUTER PRODUCTS DIV

Description

DESIGN CONTROL REFERENCE: PT540
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 70779
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N1368A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858688

NSN

5961-00-685-8688

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1N1368A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858688

NSN

5961-00-685-8688

MFG

N A P SMD TECHNOLOGY INC

Description

DESIGN CONTROL REFERENCE: 1N1368A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99942
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

3475-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858813

NSN

5961-00-685-8813

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3475-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858813

NSN

5961-00-685-8813

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 15280
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 3475-20
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES MAXIMUM
OVERALL LENGTH: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

SV3142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858813

NSN

5961-00-685-8813

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SV3142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858813

NSN

5961-00-685-8813

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 15280
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 3475-20
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES MAXIMUM
OVERALL LENGTH: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

SV3140

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858814

NSN

5961-00-685-8814

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SV3140

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858814

NSN

5961-00-685-8814

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: SV3140
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

544-2567-000

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961006858897

NSN

5961-00-685-8897

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544-2567-000

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961006858897

NSN

5961-00-685-8897

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

1N64

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858990

NSN

5961-00-685-8990

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1N64

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858990

NSN

5961-00-685-8990

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N64 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N66

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858991

NSN

5961-00-685-8991

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1N66

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006858991

NSN

5961-00-685-8991

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

652C0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859031

NSN

5961-00-685-9031

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652C0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859031

NSN

5961-00-685-9031

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

C4645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859031

NSN

5961-00-685-9031

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C4645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859031

NSN

5961-00-685-9031

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

HD6568

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859132

NSN

5961-00-685-9132

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HD6568

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859132

NSN

5961-00-685-9132

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

DESIGN CONTROL REFERENCE: HD6568
MANUFACTURERS CODE: 73293
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N1363RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859142

NSN

5961-00-685-9142

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1N1363RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859142

NSN

5961-00-685-9142

MFG

N A P SMD TECHNOLOGY INC

Description

DESIGN CONTROL REFERENCE: 1N1363RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 99942
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1N1217

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859273

NSN

5961-00-685-9273

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1N1217

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859273

NSN

5961-00-685-9273

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1217 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N1490

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

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1N1490

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

3003160-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

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3003160-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

353-1659-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

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353-1659-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

EM100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

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EM100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006859274

NSN

5961-00-685-9274

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

2N1035

TRANSISTOR

NSN, MFG P/N

5961006859301

NSN

5961-00-685-9301

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2N1035

TRANSISTOR

NSN, MFG P/N

5961006859301

NSN

5961-00-685-9301

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREA