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5961-01-369-8441
20 Products
72007
TRANSISTOR
NSN, MFG P/N
5961013698441
NSN
5961-01-369-8441
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 12.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: FLANGE AND TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.405 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-964611 DRAWING
TRANSFER
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8811-3779-1
TRANSISTOR
NSN, MFG P/N
5961013696939
NSN
5961-01-369-6939
MFG
DRS ICAS, LLC
Description
TRANSISTOR
Related Searches:
8811-3777-1
TRANSISTOR
NSN, MFG P/N
5961013696940
NSN
5961-01-369-6940
MFG
DRS ICAS, LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
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740108PC86
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013696942
NSN
5961-01-369-6942
740108PC86
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013696942
NSN
5961-01-369-6942
MFG
SPD ELECTRICAL SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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V150LTX10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013696942
NSN
5961-01-369-6942
V150LTX10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013696942
NSN
5961-01-369-6942
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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8811-3791-1
TRANSISTOR
NSN, MFG P/N
5961013696979
NSN
5961-01-369-6979
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MINIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MINIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 110.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 25.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 65.0 MINIMUM BREAKDOWN
~1: VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
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8811-3794-1
TRANSISTOR
NSN, MFG P/N
5961013696980
NSN
5961-01-369-6980
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 600.00 MILLIWATTS MINIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 25.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 65.0 MINIMUM BREAKDOWN
~1: VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
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2N995
TRANSISTOR
NSN, MFG P/N
5961013696981
NSN
5961-01-369-6981
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-845597 DRAWING
TRANSFER RATIO: 35.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 140.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL CO
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845597-1
TRANSISTOR
NSN, MFG P/N
5961013696981
NSN
5961-01-369-6981
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-845597 DRAWING
TRANSFER RATIO: 35.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 140.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL CO
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1216969-201
TRANSISTOR
NSN, MFG P/N
5961013696982
NSN
5961-01-369-6982
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.110 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM BREAKDO
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73636R
TRANSISTOR
NSN, MFG P/N
5961013696982
NSN
5961-01-369-6982
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.110 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM BREAKDO
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MSC 73636R
TRANSISTOR
NSN, MFG P/N
5961013696982
NSN
5961-01-369-6982
MFG
MICROSEMI CORP. - MONTGOMERYVILLE
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.306 INCHES MINIMUM AND 0.318 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.110 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM BREAKDO
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696983
NSN
5961-01-369-6983
A531A238-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696983
NSN
5961-01-369-6983
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696983
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5961-01-369-6983
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696983
NSN
5961-01-369-6983
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
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1209303-201
TRANSISTOR
NSN, MFG P/N
5961013697616
NSN
5961-01-369-7616
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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V11982
TRANSISTOR
NSN, MFG P/N
5961013697616
NSN
5961-01-369-7616
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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9377730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013697617
NSN
5961-01-369-7617
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: M1A2 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377730
SPEC/STD CONTROLLING DATA:
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SEMICONDUCTOR DEVICE,DIODE
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5961013697617
NSN
5961-01-369-7617
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013697617
NSN
5961-01-369-7617
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: M1A2 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377730
SPEC/STD CONTROLLING DATA:
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1216947-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013697618
NSN
5961-01-369-7618
1216947-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013697618
NSN
5961-01-369-7618
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: HOLDER PLATED GOLD
INCLOSURE MATERIAL: METAL AND GLASS
MANUFACTURERS CODE: 03538
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 1216947-201
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DIMENSIONS INCLUDE HOLDER BUT NOT LEADS; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 56232-1216947 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013697618
NSN
5961-01-369-7618
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: HOLDER PLATED GOLD
INCLOSURE MATERIAL: METAL AND GLASS
MANUFACTURERS CODE: 03538
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 1216947-201
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DIMENSIONS INCLUDE HOLDER BUT NOT LEADS; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 56232-1216947 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DC
