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5961-00-813-7283

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1486431

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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1486431

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST D

B9PH039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008135980

NSN

5961-00-813-5980

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B9PH039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008135980

NSN

5961-00-813-5980

MFG

PARAMETRIC INDUSTRIES INC

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF

MA4766

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008135980

NSN

5961-00-813-5980

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MA4766

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008135980

NSN

5961-00-813-5980

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF

18DB10A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136706

NSN

5961-00-813-6706

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18DB10A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136706

NSN

5961-00-813-6706

MFG

INTERNATIONAL RECTIFIER CORPORATION

BA232-100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136706

NSN

5961-00-813-6706

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BA232-100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136706

NSN

5961-00-813-6706

MFG

EDAL INDUSTRIES INC.

JAN2N1045

TRANSISTOR

NSN, MFG P/N

5961008136708

NSN

5961-00-813-6708

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JAN2N1045

TRANSISTOR

NSN, MFG P/N

5961008136708

NSN

5961-00-813-6708

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1045
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/137
OVERALL LENGTH: 0.485 INCHES MINIMUM AND 0.515 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.740 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/137 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S

JAN2N1173

TRANSISTOR

NSN, MFG P/N

5961008136709

NSN

5961-00-813-6709

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JAN2N1173

TRANSISTOR

NSN, MFG P/N

5961008136709

NSN

5961-00-813-6709

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1173
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/215
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/215 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI

JAN2N1094

TRANSISTOR

NSN, MFG P/N

5961008136710

NSN

5961-00-813-6710

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JAN2N1094

TRANSISTOR

NSN, MFG P/N

5961008136710

NSN

5961-00-813-6710

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 40.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1094
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/161
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/161 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER

2N559M1

TRANSISTOR

NSN, MFG P/N

5961008136712

NSN

5961-00-813-6712

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2N559M1

TRANSISTOR

NSN, MFG P/N

5961008136712

NSN

5961-00-813-6712

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND -50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N559
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/152
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA

1N1419

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136713

NSN

5961-00-813-6713

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1N1419

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136713

NSN

5961-00-813-6713

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N1419
DEPARTURE FROM CITED DESIGNATOR: /MILS-19500/147SIGC/
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N1419 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD

1N696

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136718

NSN

5961-00-813-6718

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1N696

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136718

NSN

5961-00-813-6718

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N696
DEPARTURE FROM CITED DESIGNATOR: MIL-S-19500/121NAVY
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N696 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N667

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136719

NSN

5961-00-813-6719

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1N667

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136719

NSN

5961-00-813-6719

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 22.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N667
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/150 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

1N675

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136720

NSN

5961-00-813-6720

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1N675

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136720

NSN

5961-00-813-6720

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N675
DEPARTURE FROM CITED DESIGNATOR: /MIL-S-19500/150SIGC/
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N675 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N669

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136721

NSN

5961-00-813-6721

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1N669

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008136721

NSN

5961-00-813-6721

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N669
DEPARTURE FROM CITED DESIGNATOR: /MIL-S-19500/150SIGC/
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
NONDEFINITIVE SPEC/STD DATA: 1N669 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1290017P3

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

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1290017P3

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: N
DESIGN CONTROL REFERENCE: XA2040
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 00929
OPERATING FREQUENCY: 200.0 MEGAHERTZ MINIMUM AND 4.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.844 INCHES NOMINAL
OVERALL LENGTH: 2.350 INCHES NOMINAL
THE MANUFACTURERS DATA:

VBE438-16

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

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VBE438-16

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

MFG

THALES NEDERLAND

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: N
DESIGN CONTROL REFERENCE: XA2040
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 00929
OPERATING FREQUENCY: 200.0 MEGAHERTZ MINIMUM AND 4.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.844 INCHES NOMINAL
OVERALL LENGTH: 2.350 INCHES NOMINAL
THE MANUFACTURERS DATA:

XA2040

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

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XA2040

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008136832

NSN

5961-00-813-6832

MFG

MICROLAB/FXR

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: N
DESIGN CONTROL REFERENCE: XA2040
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 00929
OPERATING FREQUENCY: 200.0 MEGAHERTZ MINIMUM AND 4.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.844 INCHES NOMINAL
OVERALL LENGTH: 2.350 INCHES NOMINAL
THE MANUFACTURERS DATA:

1N2612

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137265

NSN

5961-00-813-7265

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1N2612

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137265

NSN

5961-00-813-7265

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3314 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

2088787-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137265

NSN

5961-00-813-7265

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2088787-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137265

NSN

5961-00-813-7265

MFG

BENDIX CORP THE

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 3314 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

16T58

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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16T58

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST D