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5961-00-890-7722
20 Products
1N2738
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008907722
NSN
5961-00-890-7722
1N2738
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008907722
NSN
5961-00-890-7722
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
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945737-506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008906595
NSN
5961-00-890-6595
945737-506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008906595
NSN
5961-00-890-6595
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 945737-506
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
945738-506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008906596
NSN
5961-00-890-6596
945738-506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008906596
NSN
5961-00-890-6596
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 945738-506
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
422594-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008907020
NSN
5961-00-890-7020
422594-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008907020
NSN
5961-00-890-7020
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 3.722 INCHES MAXIMUM
OVERALL LENGTH: 3.045 INCHES MAXIMUM
OVERALL WIDTH: 2.375 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD AND 1 CONNECTOR, COAXIAL
Related Searches:
55748-1
TRANSISTOR
NSN, MFG P/N
5961008907025
NSN
5961-00-890-7025
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 55748-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INCL HEATSINK,TEXAS INSTRUMENTS,INC PART NO. 410982-1; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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1N752A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907026
NSN
5961-00-890-7026
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
476-0005-001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008907039
NSN
5961-00-890-7039
476-0005-001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008907039
NSN
5961-00-890-7039
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
Related Searches:
CA19098
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008907039
NSN
5961-00-890-7039
MFG
MICROSEMI CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
Related Searches:
KX1696
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008907039
NSN
5961-00-890-7039
MFG
GENERAL SEMICONDUCTOR INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
Related Searches:
PS2121
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008907039
NSN
5961-00-890-7039
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
Related Searches:
CD32331
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907152
NSN
5961-00-890-7152
MFG
TELCOM SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: PS6815
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PS6815
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907152
NSN
5961-00-890-7152
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PS6815
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PS6825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907153
NSN
5961-00-890-7153
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PS6825
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6788
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907154
NSN
5961-00-890-7154
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD6788
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD4568
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907155
NSN
5961-00-890-7155
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
DESIGN CONTROL REFERENCE: HD6819
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73293
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6819
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907155
NSN
5961-00-890-7155
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD6819
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73293
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
HD6226
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907156
NSN
5961-00-890-7156
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
10658130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907484
NSN
5961-00-890-7484
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
MFR SOURCE CONTROLLING REFERENCE: 10658130
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
G365392
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008907484
NSN
5961-00-890-7484
MFG
TELCOM SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
MFR SOURCE CONTROLLING REFERENCE: 10658130
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
4JA411DB2AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008907722
NSN
5961-00-890-7722
4JA411DB2AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008907722
NSN
5961-00-890-7722
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.620 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 4JA411DB2AD1
MANUFACTURERS CODE: 03508
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.562 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
SPECIAL FEATURES: TWO 0.147 IN.DIA MTG HOLES SPACED 4.200 IN.C TO C;ENVIRONMENTAL PROTECTION:CORROSION AND MOISTURE;LEAD TYPE:RESISTIVE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
