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5961-00-902-0325

20 Products

723060-016

TRANSISTOR

NSN, MFG P/N

5961009020325

NSN

5961-00-902-0325

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723060-016

TRANSISTOR

NSN, MFG P/N

5961009020325

NSN

5961-00-902-0325

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 723060-016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 05869
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 WIRE HOOK
THE MANUFACTURERS DATA:

577R149H03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009020514

NSN

5961-00-902-0514

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577R149H03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009020514

NSN

5961-00-902-0514

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 577R149H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 97942
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

2132496

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009020585

NSN

5961-00-902-0585

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2132496

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009020585

NSN

5961-00-902-0585

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2132496
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 10001
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N2789

TRANSISTOR

NSN, MFG P/N

5961009020755

NSN

5961-00-902-0755

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2N2789

TRANSISTOR

NSN, MFG P/N

5961009020755

NSN

5961-00-902-0755

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4358 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOL

STC1591

TRANSISTOR

NSN, MFG P/N

5961009020977

NSN

5961-00-902-0977

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STC1591

TRANSISTOR

NSN, MFG P/N

5961009020977

NSN

5961-00-902-0977

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

DESIGN CONTROL REFERENCE: STC1591
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07256
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

2N147

TRANSISTOR

NSN, MFG P/N

5961009020992

NSN

5961-00-902-0992

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2N147

TRANSISTOR

NSN, MFG P/N

5961009020992

NSN

5961-00-902-0992

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.315 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

014-739

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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014-739

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

AMPEX SYSTEMS CORP

05255

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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05255

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

BASLER ELECTRIC COMPANY

10212188

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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10212188

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

U S ARMY AVIATION AND MISSILE COMMAND

10557416

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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10557416

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

13205E4848

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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13205E4848

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

CECOM LR CENTER

14500025-001

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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14500025-001

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

HONEYWELL INC COMMERCIAL DIV

1855-0010

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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1855-0010

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

2N2646

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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2N2646

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

FREESCALE SEMICONDUCTOR INC.

2N2646A

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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2N2646A

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

ADELCO ELEKTRONIK GMBH

386-7250P1

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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386-7250P1

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

RAYTHEON COMPANY DBA RAYTHEON

40002031-000

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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40002031-000

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

DNE TECHNOLOGIES INC.

48-29900E61

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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48-29900E61

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

490846

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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490846

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

DRESSER INC. DIV DRESSER WAUKESHA

5800583-942300-101

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

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5800583-942300-101

TRANSISTOR

NSN, MFG P/N

5961009021177

NSN

5961-00-902-1177

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6