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5961-00-968-7551
20 Products
10049672-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009687551
NSN
5961-00-968-7551
10049672-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009687551
NSN
5961-00-968-7551
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10049660
TRANSISTOR
NSN, MFG P/N
5961009687623
NSN
5961-00-968-7623
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.288 INCHES MAXIMUM
OVERALL LENGTH: 0.794 INCHES MAXIMUM
OVERALL WIDTH: 0.434 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 M
Related Searches:
2N1762
TRANSISTOR
NSN, MFG P/N
5961009687623
NSN
5961-00-968-7623
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.288 INCHES MAXIMUM
OVERALL LENGTH: 0.794 INCHES MAXIMUM
OVERALL WIDTH: 0.434 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 M
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075006-0-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009689277
NSN
5961-00-968-9277
075006-0-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009689277
NSN
5961-00-968-9277
MFG
ELECTRIC BOAT CORP DBA ELECTRO DYNAMIC
Description
CURRENT RATING PER CHARACTERISTIC: 1600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3295
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 2.395 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERIES
Related Searches:
JAN1N3295
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009689277
NSN
5961-00-968-9277
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3295
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-205AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 2.395 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERIES
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14-236-349-00-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
14-236-349-00-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
Related Searches:
4JA2011DX68
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
4JA2011DX68
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
MATERIAL: SILICON
Related Searches:
A2011DX68
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
A2011DX68
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690454
NSN
5961-00-969-0454
MFG
GENERAL ELECTRIC CO ELECTRICAL DISTRIBUTION AND CONTROL
Description
MATERIAL: SILICON
Related Searches:
14-236-349-00-004
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690456
NSN
5961-00-969-0456
14-236-349-00-004
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690456
NSN
5961-00-969-0456
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
Related Searches:
4JA2011BX65
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690456
NSN
5961-00-969-0456
4JA2011BX65
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690456
NSN
5961-00-969-0456
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
MATERIAL: SILICON
Related Searches:
14-236-349-008
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690457
NSN
5961-00-969-0457
14-236-349-008
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690457
NSN
5961-00-969-0457
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
Related Searches:
A2011BX66
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690457
NSN
5961-00-969-0457
A2011BX66
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690457
NSN
5961-00-969-0457
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
Related Searches:
14-236-349-00-006
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
14-236-349-00-006
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
Related Searches:
320C040G86NMIL
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
320C040G86NMIL
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
MFG
WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT
Description
MATERIAL: SILICON
Related Searches:
S508C540G97
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
S508C540G97
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
MATERIAL: SILICON
Related Searches:
SS0648
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
SS0648
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690459
NSN
5961-00-969-0459
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
MATERIAL: SILICON
Related Searches:
14-236-349-00-007
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
14-236-349-00-007
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
MFG
ALLIS-CHALMERS CORP
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
Related Searches:
4JA2011MX67
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
4JA2011MX67
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
Related Searches:
A2011MX67
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
A2011MX67
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009690460
NSN
5961-00-969-0460
MFG
INDUSTRIAL BAG & SPECIALTIES INC .
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
Related Searches:
P2172A
TRANSISTOR
NSN, MFG P/N
5961009691960
NSN
5961-00-969-1960
MFG
TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
