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5961-01-095-0509
20 Products
152-0270-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950509
NSN
5961-01-095-0509
152-0270-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950509
NSN
5961-01-095-0509
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
418715-61
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
RAYTHEON COMPANY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
Related Searches:
479-0443-053
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
479-0443-053
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
Related Searches:
50240110-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
50240110-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
MAGNETIC PERIPHERALS INC NORMANDALE OPNS SUB OF CONTROL DATA CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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5E4820/51-0013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
5E4820/51-0013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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7890071-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
7890071-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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905956-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
905956-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
GENERAL DYNAMICS CANADA LTD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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DZ730820K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
SIEMENS CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
Related Searches:
FZ7049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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JAN1N755A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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JANTX1N755A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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L02141
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
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SZ30016-145
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
SZ30016-145
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950046
NSN
5961-01-095-0046
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: TELEPHONE, CENTRAL OFFICE; COUNTERMEASURE SET; TEST STATION; B-52 SUPPORT EQUIPMENT; AIRBORN MOBILE DIR AIR SPT CT; SATELLITE COMMUNICATIONS TERM; TEST SET; AIRCRAFT; RADAR; MK-48 TORPEDO
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CO
Related Searches:
JAN1N5468B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950047
NSN
5961-01-095-0047
JAN1N5468B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950047
NSN
5961-01-095-0047
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5468B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/436
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MAX CAPACITANCE 23.1 PF; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/436 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULA
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950505
NSN
5961-01-095-0505
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
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152-0123-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950506
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5961-01-095-0506
152-0123-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950506
NSN
5961-01-095-0506
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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152-0287-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950507
NSN
5961-01-095-0507
152-0287-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950507
NSN
5961-01-095-0507
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950507
NSN
5961-01-095-0507
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950507
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5961-01-095-0507
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950507
NSN
5961-01-095-0507
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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152-0326-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950508
NSN
5961-01-095-0508
152-0326-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010950508
NSN
5961-01-095-0508
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
