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5961-00-950-6586

20 Products

JAN1N3995RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506586

NSN

5961-00-950-6586

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JAN1N3995RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506586

NSN

5961-00-950-6586

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3995RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

00-875-121-289

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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00-875-121-289

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

ALLIS-CHALMERS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

1N3996

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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1N3996

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

JOINT ELECTRON DEVICE ENGINEERING COUNCIL

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

1N3996A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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1N3996A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

3522 500 10129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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3522 500 10129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

THALES NEDERLAND

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

5491338P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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5491338P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

5961009506588

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

View More Info

5961009506588

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

A38-0010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

View More Info

A38-0010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

KURZ & ROOT GENERATOR COMPANY LLC

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

C24386-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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C24386-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

BOGUE ELECTRIC MANUFACTURING CO

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

DRC81221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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DRC81221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

UNISYS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

J94-0150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

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J94-0150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

WARD LEONARD ELECTRIC CO INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

JAN1N3996A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

View More Info

JAN1N3996A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

JAN1N3996AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

View More Info

JAN1N3996AA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

NS12006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

View More Info

NS12006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506588

NSN

5961-00-950-6588

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD OR SILVER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TY

JAN1N3996RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506593

NSN

5961-00-950-6593

View More Info

JAN1N3996RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506593

NSN

5961-00-950-6593

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.84 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

JAN1N3996RAA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506593

NSN

5961-00-950-6593

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JAN1N3996RAA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506593

NSN

5961-00-950-6593

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 1.84 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3996RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

1902-1232

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

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1902-1232

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 1.68 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3997RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

1N3997RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

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1N3997RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.68 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3997RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

JAN1N3997RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

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JAN1N3997RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.68 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3997RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC

JAN1N3997RAA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

View More Info

JAN1N3997RAA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009506594

NSN

5961-00-950-6594

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 1.68 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3997RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-272
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARAC