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5961-00-982-6780
20 Products
207026P3
TRANSISTOR
NSN, MFG P/N
5961009826780
NSN
5961-00-982-6780
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SM2292
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009826635
NSN
5961-00-982-6635
SM2292
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009826635
NSN
5961-00-982-6635
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
Related Searches:
SP8532
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009826635
NSN
5961-00-982-6635
SP8532
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009826635
NSN
5961-00-982-6635
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
Related Searches:
101967
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
101967
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
SIERRA NETWORKS INC SIERRACOM DIV
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
3068349
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
3068349
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
652-023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
652-023
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
D10830A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
D10830A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
MB5004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MB5004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
MICROSEMI CORPORATION
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
SA791
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
SA791
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961009826640
NSN
5961-00-982-6640
MFG
SEMTECH CORPORATION
Description
DESIGN CONTROL REFERENCE: 3068349
MANUFACTURERS CODE: 77068
SPECIAL FEATURES: BRIDGE RECTIFIER;HERMETICALLY SEALED;4 WIRE LEADS;ENCAPSULATED FLAT PKG;0.330 IN. LG;0.320 IN. W;0.130 IN. THK;M55 DEG C TO P150 DEG C OPERATING TEMP RANGE
THE MANUFACTURERS DATA:
Related Searches:
3068337-2
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009826658
NSN
5961-00-982-6658
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
SEMICONDUCTOR DEVIC
Related Searches:
HR1E
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009826658
NSN
5961-00-982-6658
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
SEMICONDUCTOR DEVIC
Related Searches:
3162241
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826663
NSN
5961-00-982-6663
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FA2516
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961009826689
NSN
5961-00-982-6689
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVIC
Related Searches:
1194007P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826717
NSN
5961-00-982-6717
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.105 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
99-3343-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826717
NSN
5961-00-982-6717
99-3343-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826717
NSN
5961-00-982-6717
MFG
KILGORE FLARES COMPANY LLC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.105 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UT4005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826717
NSN
5961-00-982-6717
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.105 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SCE75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009826721
NSN
5961-00-982-6721
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.139 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 5250.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
264702-001
TRANSISTOR
NSN, MFG P/N
5961009826780
NSN
5961-00-982-6780
MFG
SOLARTRON ELECTRONICS INC WESTON INSTRUMENTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2666307-1
TRANSISTOR
NSN, MFG P/N
5961009826780
NSN
5961-00-982-6780
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4063
TRANSISTOR
NSN, MFG P/N
5961009826780
NSN
5961-00-982-6780
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
