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5961-01-005-5428
20 Products
20-00904-018
TRANSISTOR
NSN, MFG P/N
5961010055428
NSN
5961-01-005-5428
MFG
RAYTHEON SYSTEMS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND 10.00 AMPERES NOMINAL BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.061 INCHES MAXIMUM
OVERALL WIDTH: 0.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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NSS3451
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010055129
NSN
5961-01-005-5129
NSS3451
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010055129
NSN
5961-01-005-5129
MFG
DIODES INC
Description
DESIGN CONTROL REFERENCE: 2534939
MANUFACTURERS CODE: 10001
SPECIAL FEATURES: ENCAPSULATED;3.880 IN. LG;2.000 IN. W;1.000 IN. H;TWO TURRET TYPE TERMINALS
THE MANUFACTURERS DATA:
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BZX79C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055151
NSN
5961-01-005-5151
MFG
AMPEREX ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES MAXIMUM
OVERALL LENGTH: 0.177 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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BY176
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055152
NSN
5961-01-005-5152
MFG
AMPEREX ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 6.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 25.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.787 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1.5SE200A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055153
NSN
5961-01-005-5153
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 162.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N5665A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055153
NSN
5961-01-005-5153
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 162.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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5L.5532.207.16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055153
NSN
5961-01-005-5153
5L.5532.207.16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055153
NSN
5961-01-005-5153
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 162.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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005605-79
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055154
NSN
5961-01-005-5154
MFG
ESAB GROUP INC THE DBA ESAB WELDING & CUTTING PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N4050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055154
NSN
5961-01-005-5154
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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2710012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055155
NSN
5961-01-005-5155
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.162 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.170 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
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922-6124-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055155
NSN
5961-01-005-5155
922-6124-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055155
NSN
5961-01-005-5155
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.162 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.170 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
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MV109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010055155
NSN
5961-01-005-5155
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.162 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.170 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
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ED5171
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010055157
NSN
5961-01-005-5157
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
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SMA718488
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010055157
NSN
5961-01-005-5157
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
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472-0542-015
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055401
NSN
5961-01-005-5401
472-0542-015
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055401
NSN
5961-01-005-5401
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0542-015
MANUFACTURERS CODE: 94756
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SPECIAL FEATURES: MATCHED SET
THE MANUFACTURERS DATA:
Related Searches:
570M8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055401
NSN
5961-01-005-5401
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 472-0542-015
MANUFACTURERS CODE: 94756
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SPECIAL FEATURES: MATCHED SET
THE MANUFACTURERS DATA:
Related Searches:
472-0546-017
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055402
NSN
5961-01-005-5402
472-0546-017
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055402
NSN
5961-01-005-5402
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: NPN DUAL SWITCH; MATCHED SET
Related Searches:
472-0546-019
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055403
NSN
5961-01-005-5403
472-0546-019
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055403
NSN
5961-01-005-5403
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0546-019
MANUFACTURERS CODE: 94756
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: NPN MATCHED SET; DUAL SWITCH
THE MANUFACTURERS DATA:
Related Searches:
770M12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055403
NSN
5961-01-005-5403
770M12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010055403
NSN
5961-01-005-5403
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 472-0546-019
MANUFACTURERS CODE: 94756
OVERALL HEIGHT: 0.050 INCHES NOMINAL
OVERALL LENGTH: 0.254 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: NPN MATCHED SET; DUAL SWITCH
THE MANUFACTURERS DATA:
Related Searches:
2N6033
TRANSISTOR
NSN, MFG P/N
5961010055428
NSN
5961-01-005-5428
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND 10.00 AMPERES NOMINAL BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.061 INCHES MAXIMUM
OVERALL WIDTH: 0.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 150.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
