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5961-01-167-6510
20 Products
005779
TRANSISTOR
NSN, MFG P/N
5961011676510
NSN
5961-01-167-6510
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
006085
TRANSISTOR
NSN, MFG P/N
5961011676511
NSN
5961-01-167-6511
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
006189
TRANSISTOR
NSN, MFG P/N
5961011676512
NSN
5961-01-167-6512
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
006308
TRANSISTOR
NSN, MFG P/N
5961011676513
NSN
5961-01-167-6513
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
003398
TRANSISTOR
NSN, MFG P/N
5961011676514
NSN
5961-01-167-6514
MFG
ITT CORPORATION
Description
TRANSISTOR
Related Searches:
002354
TRANSISTOR
NSN, MFG P/N
5961011676515
NSN
5961-01-167-6515
MFG
ITT CORPORATION
Description
TRANSISTOR
Related Searches:
005659
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676517
NSN
5961-01-167-6517
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0652-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676916
NSN
5961-01-167-6916
152-0652-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676916
NSN
5961-01-167-6916
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CMX252
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676916
NSN
5961-01-167-6916
MFG
UNITRODE CORP HIGH VOLTAGE DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
037306
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676917
NSN
5961-01-167-6917
MFG
MILLER ELECTRIC MFG CO
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 4.700 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.312 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
Q-0798
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011676918
NSN
5961-01-167-6918
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.164 INCHES ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
THREAD SERIES DESIGNATOR: UNC ALL TRANSISTOR
Related Searches:
932457-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011677431
NSN
5961-01-167-7431
932457-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011677431
NSN
5961-01-167-7431
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM DRAIN CURRENT AND 100.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.225 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES NOMINAL
OVERALL WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
CA3102
TRANSISTOR
NSN, MFG P/N
5961011677721
NSN
5961-01-167-7721
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
III END ITEM IDENTIFICATION: 110C
Related Searches:
434456
TRANSISTOR
NSN, MFG P/N
5961011678519
NSN
5961-01-167-8519
MFG
FLUKE CORPORATION
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.156 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
335067
TRANSISTOR
NSN, MFG P/N
5961011678520
NSN
5961-01-167-8520
MFG
FLUKE CORPORATION
Description
III END ITEM IDENTIFICATION: 6625-01-100-6196
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
Related Searches:
248351
TRANSISTOR
NSN, MFG P/N
5961011678521
NSN
5961-01-167-8521
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 NOMINAL SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3
Related Searches:
17407-1
TRANSISTOR
NSN, MFG P/N
5961011678523
NSN
5961-01-167-8523
MFG
DRS SIGNAL SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.655 INCHES MAXIMUM
OVERALL LENGTH: 1.065 INCHES MAXIMUM
OVERALL WIDTH: 1.065 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 16.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
28372-143
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011678526
NSN
5961-01-167-8526
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
KS4522
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011678527
NSN
5961-01-167-8527
MFG
KSW ELECTRONICS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4M6-3AZ2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011678528
NSN
5961-01-167-8528
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
