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5961-01-011-2087

20 Products

2N5032

TRANSISTOR

NSN, MFG P/N

5961010112087

NSN

5961-01-011-2087

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2N5032

TRANSISTOR

NSN, MFG P/N

5961010112087

NSN

5961-01-011-2087

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.00 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

167-0057-001

TRANSISTOR

NSN, MFG P/N

5961010112088

NSN

5961-01-011-2088

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167-0057-001

TRANSISTOR

NSN, MFG P/N

5961010112088

NSN

5961-01-011-2088

MFG

NCR CORP POWER SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N6307

TRANSISTOR

NSN, MFG P/N

5961010112088

NSN

5961-01-011-2088

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2N6307

TRANSISTOR

NSN, MFG P/N

5961010112088

NSN

5961-01-011-2088

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

353-3591-490

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

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353-3591-490

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4625
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CAN'T CHANGE CRITICALITY CODE TO REFLECT NUCLEAT HARDNESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOL

JAN1N4625

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

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JAN1N4625

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4625
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CAN'T CHANGE CRITICALITY CODE TO REFLECT NUCLEAT HARDNESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOL

MZ4625A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

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MZ4625A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112090

NSN

5961-01-011-2090

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4625
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CAN'T CHANGE CRITICALITY CODE TO REFLECT NUCLEAT HARDNESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOL

ASIFDB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112160

NSN

5961-01-011-2160

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ASIFDB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112160

NSN

5961-01-011-2160

MFG

AMERICAN RECTIFIER CORP

Description

III END ITEM IDENTIFICATION: DLA/GSA MANAGED ITEMS THAT CAN NOT BE IDENTIFIED TO A SPECIFIC ARMY WEAPONS SYSTEM/END ITEM

10181721

TRANSISTOR

NSN, MFG P/N

5961010112493

NSN

5961-01-011-2493

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10181721

TRANSISTOR

NSN, MFG P/N

5961010112493

NSN

5961-01-011-2493

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
DESIGN CONTROL REFERENCE: 10181721
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.218 INCHES NOMINAL
OVERALL HEIGHT: 0.197 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N2019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112494

NSN

5961-01-011-2494

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1N2019

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112494

NSN

5961-01-011-2494

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

OVERALL DIAMETER: 0.103 INCHES NOMINAL
OVERALL HEIGHT: 2.403 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N2021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112495

NSN

5961-01-011-2495

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1N2021

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010112495

NSN

5961-01-011-2495

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

OVERALL HEIGHT: 1.430 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.675 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON

2138135G002

TRANSISTOR

NSN, MFG P/N

5961010112523

NSN

5961-01-011-2523

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2138135G002

TRANSISTOR

NSN, MFG P/N

5961010112523

NSN

5961-01-011-2523

MFG

ITT CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC

353-3696-022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

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353-3696-022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

60020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

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60020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

D5863-88

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

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D5863-88

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113008

NSN

5961-01-011-3008

MFG

SKYWORKS SOLUTIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

231310-701

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113522

NSN

5961-01-011-3522

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231310-701

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010113522

NSN

5961-01-011-3522

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 231310-701
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81413
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

52-714-025

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

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52-714-025

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

MFG

ASTEC AMERICA INC .

Description

CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKOVER VOLTAGE, DC

C45UFLAG

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

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C45UFLAG

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKOVER VOLTAGE, DC

NLC45U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

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NLC45U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010113523

NSN

5961-01-011-3523

MFG

NATIONAL SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1200.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKOVER VOLTAGE, DC

341-0411-002

TRANSISTOR

NSN, MFG P/N

5961010113903

NSN

5961-01-011-3903

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341-0411-002

TRANSISTOR

NSN, MFG P/N

5961010113903

NSN

5961-01-011-3903

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

DESIGN CONTROL REFERENCE: 341-0411-002
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97896
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

341-0184-003

TRANSISTOR

NSN, MFG P/N

5961010113904

NSN

5961-01-011-3904

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341-0184-003

TRANSISTOR

NSN, MFG P/N

5961010113904

NSN

5961-01-011-3904

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

DESIGN CONTROL REFERENCE: 341-0184-003
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97896
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: