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5961-01-037-4712
20 Products
163964
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
SCIENTIFIC ATLANTA INC
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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1N5806JTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
MICRO USPD INC
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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20-00779-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
20-00779-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
231048-706
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
231048-706
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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3323-1229-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
3323-1229-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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353-9019-410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
353-9019-410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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7906930-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
7906930-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
808136-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
RAYTHEON COMPANY
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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944467-8060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
944467-8060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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B72159
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
MBDA UK LTD
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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CR122-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JAN1N5806
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N5806
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
JANTX1N5806
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010374712
NSN
5961-01-037-4712
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5806
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
244450-000
TRANSISTOR
NSN, MFG P/N
5961010374990
NSN
5961-01-037-4990
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.252 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM PROVIDED W/2 LUGS ATTACHED TO TO-66 PINS.; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
244346-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010374991
NSN
5961-01-037-4991
244346-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010374991
NSN
5961-01-037-4991
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
DESIGN CONTROL REFERENCE: 244346-000
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM ITEM TYPE NUMBER: CV-3352/APR-38
MANUFACTURERS CODE: 81413
SPECIAL FEATURES: LORAL ELECT SYS NHA 244344-000; MATL SILICON
THE MANUFACTURERS DATA:
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STR8020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010375119
NSN
5961-01-037-5119
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FOR DIRECT REPLACEMENT OF A TYPE 8020 HALF WAVE HI VACUUM RECTIFIER; 2 TERMINALS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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898-60
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010376364
NSN
5961-01-037-6364
898-60
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010376364
NSN
5961-01-037-6364
MFG
BI TECHNOLOGIES CORPORATION
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PIN
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010376364
NSN
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010376364
NSN
5961-01-037-6364
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PIN
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4952856
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010376365
NSN
5961-01-037-6365
4952856
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010376365
NSN
5961-01-037-6365
MFG
GENERAL MOTORS CORP DELCO PRODUCTS DIV MACHINE CONTROL SYSTEMS
Description
PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
SPECIAL FEATURES: 4 DIODES;1.000 IN. LG OF LEADS;0.700 IN. H;0.700 IN. W;0.500 IN. LG;PRECIOUS MATERIAL:SILVER
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3191923
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010376455
NSN
5961-01-037-6455
MFG
GENERAL MOTORS CORP DELCO PRODUCTS DIV MACHINE CONTROL SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
