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5961-00-856-0087

20 Products

1.5M25ZC.5

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008560087

NSN

5961-00-856-0087

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1.5M25ZC.5

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008560087

NSN

5961-00-856-0087

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE

1N1616

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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1N1616

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

352250009992

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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352250009992

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

THALES NEDERLAND

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

800030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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800030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DBA SPACE TECHNOLOGY SECTOR DIV SPACE TECHNOLOGY

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

928631-103

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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928631-103

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

BACD2B204

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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BACD2B204

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

THE BOEING COMPANY DBA BOEING

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SM-D-451557

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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SM-D-451557

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

USA1N1616

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

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USA1N1616

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557224

NSN

5961-00-855-7224

MFG

UNDERWRITERS LABORATORIES INC .

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N1616
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/162
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/162 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

4178600-384

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

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4178600-384

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N945B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.01 MAXIM

947060-9452

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

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947060-9452

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

MFG

LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N945B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.01 MAXIM

JAN1N945B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

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JAN1N945B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008557695

NSN

5961-00-855-7695

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N945B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.01 MAXIM

1084123

TRANSISTOR

NSN, MFG P/N

5961008557975

NSN

5961-00-855-7975

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1084123

TRANSISTOR

NSN, MFG P/N

5961008557975

NSN

5961-00-855-7975

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

SMC337565

TRANSISTOR

NSN, MFG P/N

5961008557975

NSN

5961-00-855-7975

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SMC337565

TRANSISTOR

NSN, MFG P/N

5961008557975

NSN

5961-00-855-7975

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

632253-2

TRANSISTOR

NSN, MFG P/N

5961008557976

NSN

5961-00-855-7976

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632253-2

TRANSISTOR

NSN, MFG P/N

5961008557976

NSN

5961-00-855-7976

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

DESIGN CONTROL REFERENCE: 632253-2
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 07187
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

10M87-5ZB2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008558712

NSN

5961-00-855-8712

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10M87-5ZB2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008558712

NSN

5961-00-855-8712

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

DESIGN CONTROL REFERENCE: 10M87-5ZB2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94990
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

617941-1REVA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008558712

NSN

5961-00-855-8712

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617941-1REVA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008558712

NSN

5961-00-855-8712

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 10M87-5ZB2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94990
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

SV2160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560082

NSN

5961-00-856-0082

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SV2160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560082

NSN

5961-00-856-0082

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: SV2160
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1105445-9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560083

NSN

5961-00-856-0083

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1105445-9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560083

NSN

5961-00-856-0083

MFG

ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE

1N1345A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560083

NSN

5961-00-856-0083

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1N1345A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560083

NSN

5961-00-856-0083

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

05-900403

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560084

NSN

5961-00-856-0084

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05-900403

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008560084

NSN

5961-00-856-0084

MFG

LUCAS AEROSPACE POWER EQUIPMENT CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF