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5961-01-041-5267
20 Products
30184-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010415267
NSN
5961-01-041-5267
30184-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010415267
NSN
5961-01-041-5267
MFG
COOPER CROUSE-HINDS LLC DBA AIRPORT LIGHTING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: C147M
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MICA INSULATOR INCLUDED
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C-06268-99007 ITEM2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010413349
NSN
5961-01-041-3349
C-06268-99007 ITEM2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010413349
NSN
5961-01-041-3349
MFG
AGILENT TECHNOLOGIES INC. DIV POWER PRODUCTS SITE
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT); AIRCRAFT, VIKING S-3B
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28480-A-1884-0248-1 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
1N53BM
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010413350
NSN
5961-01-041-3350
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N53BM
FUNCTION FOR WHICH DESIGNED: MIXER
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/186
OVERALL DIAMETER: 0.158 INCHES MINIMUM AND 0.162 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/186 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
JAN1N53BM
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010413350
NSN
5961-01-041-3350
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N53BM
FUNCTION FOR WHICH DESIGNED: MIXER
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/186
OVERALL DIAMETER: 0.158 INCHES MINIMUM AND 0.162 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/186 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
3-20043
TRANSISTOR
NSN, MFG P/N
5961010413809
NSN
5961-01-041-3809
MFG
VU-DATA CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MPSA43
TRANSISTOR
NSN, MFG P/N
5961010413809
NSN
5961-01-041-3809
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N4119A
TRANSISTOR
NSN, MFG P/N
5961010414597
NSN
5961-01-041-4597
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
MA40009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010414598
NSN
5961-01-041-4598
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: MA40009
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96341
OVERALL DIAMETER: 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.076 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
DPZ30-36R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010414599
NSN
5961-01-041-4599
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
DESIGN CONTROL REFERENCE: DPZ30-36R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 16758
OVERALL DIAMETER: 1.437 INCHES NOMINAL
OVERALL HEIGHT: 2.250 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
3005976-00
TRANSISTOR
NSN, MFG P/N
5961010414699
NSN
5961-01-041-4699
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DESIGN CONTROL REFERENCE: 3005976-00
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 90536
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.315 INCHES NOMINAL
OVERALL LENGTH: 0.245 INCHES NOMINAL
TERMINAL LENGTH: 0.510 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
138C686H01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010415045
NSN
5961-01-041-5045
138C686H01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010415045
NSN
5961-01-041-5045
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: AIR ROUTE SURVEILLANCE RADAR 3 (ARSR3), FA-9211/FA-9228 RADAR MODULATOR
MATERIAL: SILICON
OVERALL LENGTH: 11.850 INCHES MAXIMUM
OVERALL WIDTH: 6.730 INCHES MAXIMUM
SPECIAL FEATURES: FUNCTION: RECTIFIER ASSEMBLY; REFERENCE DATA: 6A5A2ZZ1, TI-6340.8, INSTRUCTION BOOK, ARSR-3 SYSTEM, PART II, VOL 9, SEC 8, PG 8-519
Related Searches:
A7012MX350
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010415045
NSN
5961-01-041-5045
A7012MX350
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010415045
NSN
5961-01-041-5045
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: AIR ROUTE SURVEILLANCE RADAR 3 (ARSR3), FA-9211/FA-9228 RADAR MODULATOR
MATERIAL: SILICON
OVERALL LENGTH: 11.850 INCHES MAXIMUM
OVERALL WIDTH: 6.730 INCHES MAXIMUM
SPECIAL FEATURES: FUNCTION: RECTIFIER ASSEMBLY; REFERENCE DATA: 6A5A2ZZ1, TI-6340.8, INSTRUCTION BOOK, ARSR-3 SYSTEM, PART II, VOL 9, SEC 8, PG 8-519
Related Searches:
09-109168-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
09-109168-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
MFG
STANDARD POWER INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE 1 PCT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4734D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE 1 PCT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BD126516G32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
BD126516G32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
MFG
SUPERIOR ELECTRIC HOLDING GROUP LLC DBA SUPERIOR ELECTRIC DIV DANAHER SENSORS & CONTROLS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE 1 PCT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
ITT6144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE 1 PCT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ5.6-1%
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010415049
NSN
5961-01-041-5049
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TOLERANCE 1 PCT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PT5707
TRANSISTOR
NSN, MFG P/N
5961010415263
NSN
5961-01-041-5263
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PT5707
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 01281
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.385 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
PT6727
TRANSISTOR
NSN, MFG P/N
5961010415264
NSN
5961-01-041-5264
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: PT6727
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 01281
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL LENGTH: 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.385 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
Related Searches:
846C14-7M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010415267
NSN
5961-01-041-5267
846C14-7M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010415267
NSN
5961-01-041-5267
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: C147M
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MICA INSULATOR INCLUDED
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
