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5961-01-023-9962
20 Products
1902-3188
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239962
NSN
5961-01-023-9962
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
20-178026
TRANSISTOR
NSN, MFG P/N
5961010239952
NSN
5961-01-023-9952
MFG
ADAGE INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SD201DC
TRANSISTOR
NSN, MFG P/N
5961010239952
NSN
5961-01-023-9952
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SDF8201
TRANSISTOR
NSN, MFG P/N
5961010239952
NSN
5961-01-023-9952
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1291-304
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1855-0647
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
G390314-1
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SD210
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SD210DE
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SD210EE
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
ASCHBACHER AND ASSOCIATES INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SDF9210
TRANSISTOR
NSN, MFG P/N
5961010239953
NSN
5961-01-023-9953
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
U1839E
TRANSISTOR
NSN, MFG P/N
5961010239954
NSN
5961-01-023-9954
MFG
TELEDYNE TECHNOLOGIES INCORPORATED DBA TELEDYNE MICROELECTRONIC TECHNOLOGIES DIV MARINA DEL REY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1902-3181
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1902-3183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD 35731
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ731008J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
SIEMENS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FZ7468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ 10939-207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
SZ 10939-207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239961
NSN
5961-01-023-9961
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD 35737
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239962
NSN
5961-01-023-9962
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ780202A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010239962
NSN
5961-01-023-9962
MFG
SIEMENS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
