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5961-01-120-9314
20 Products
700123004BY
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011209314
NSN
5961-01-120-9314
700123004BY
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011209314
NSN
5961-01-120-9314
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 470.00 AMPERES MAXIMUM REVERSE CURRENT, TOTAL RMS AND 11000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-118
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 10.463 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.668 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AN
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MC5023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208535
NSN
5961-01-120-8535
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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40020000-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208536
NSN
5961-01-120-8536
40020000-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208536
NSN
5961-01-120-8536
MFG
DNE TECHNOLOGIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MULTI-HULL BO E/I FSCM 03950
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96238-40020000-000 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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3S7505SS521A7
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961011208850
NSN
5961-01-120-8850
3S7505SS521A7
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961011208850
NSN
5961-01-120-8850
MFG
GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION
Description
III END ITEM IDENTIFICATION: COMBAT SYS SUP EQUIP; AUSTIN SHIP CLASS LPD-4 AMPHIB
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44A310132-G01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961011208850
NSN
5961-01-120-8850
44A310132-G01
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961011208850
NSN
5961-01-120-8850
MFG
GENERAL ELECTRIC CO GENERAL PURPOSE CONTROL DEPT
Description
III END ITEM IDENTIFICATION: COMBAT SYS SUP EQUIP; AUSTIN SHIP CLASS LPD-4 AMPHIB
Related Searches:
18-214
TRANSISTOR
NSN, MFG P/N
5961011208922
NSN
5961-01-120-8922
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
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2N5307
TRANSISTOR
NSN, MFG P/N
5961011208922
NSN
5961-01-120-8922
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
TRANSISTOR
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587306-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208923
NSN
5961-01-120-8923
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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SEN-R-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208923
NSN
5961-01-120-8923
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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SS2996
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208923
NSN
5961-01-120-8923
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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402221-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208924
NSN
5961-01-120-8924
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 27.0 MAXIMUM FORWARD VOLTAGE, DC
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PD8924
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208924
NSN
5961-01-120-8924
MFG
PD & E ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 27.0 MAXIMUM FORWARD VOLTAGE, DC
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SA4577
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208924
NSN
5961-01-120-8924
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 27.0 MAXIMUM FORWARD VOLTAGE, DC
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SCH20000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208924
NSN
5961-01-120-8924
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 27.0 MAXIMUM FORWARD VOLTAGE, DC
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SH20000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011208924
NSN
5961-01-120-8924
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.33 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 27.0 MAXIMUM FORWARD VOLTAGE, DC
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152-0460-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011209252
NSN
5961-01-120-9252
152-0460-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011209252
NSN
5961-01-120-9252
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5299-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
III END ITEM IDENTIFICATION: AN/MST-T1 81755 FSCM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N5299
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011209252
NSN
5961-01-120-9252
JANTX1N5299
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011209252
NSN
5961-01-120-9252
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5299-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
III END ITEM IDENTIFICATION: AN/MST-T1 81755 FSCM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N5523D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011209253
NSN
5961-01-120-9253
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MU-696/U 11530 FSCM
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5896 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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2FB200
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011209313
NSN
5961-01-120-9313
2FB200
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011209313
NSN
5961-01-120-9313
MFG
BESELER CHARLES CO INC DIV IRONBOUND METAL PRODUCTS
Description
SPECIAL FEATURES: HERMETICALLY SEALED
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H2195-1110-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011209314
NSN
5961-01-120-9314
H2195-1110-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011209314
NSN
5961-01-120-9314
MFG
MARINE ELECTRIC SYSTEMS INC . DBA MESYS
Description
CURRENT RATING PER CHARACTERISTIC: 470.00 AMPERES MAXIMUM REVERSE CURRENT, TOTAL RMS AND 11000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-118
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 10.463 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.668 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AN
