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5961-01-042-8165
20 Products
1854-0448
TRANSISTOR
NSN, MFG P/N
5961010428165
NSN
5961-01-042-8165
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
NS12258
TRANSISTOR
NSN, MFG P/N
5961010428165
NSN
5961-01-042-8165
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SS1147
TRANSISTOR
NSN, MFG P/N
5961010428165
NSN
5961-01-042-8165
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
151-0346-00
TRANSISTOR
NSN, MFG P/N
5961010428166
NSN
5961-01-042-8166
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM EMITTER CURRENT, DC AND 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 750.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
Related Searches:
A705
TRANSISTOR
NSN, MFG P/N
5961010428166
NSN
5961-01-042-8166
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM EMITTER CURRENT, DC AND 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 750.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
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SJ2914
TRANSISTOR
NSN, MFG P/N
5961010428166
NSN
5961-01-042-8166
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM EMITTER CURRENT, DC AND 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 750.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
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G855
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428168
NSN
5961-01-042-8168
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
20-00820-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428169
NSN
5961-01-042-8169
20-00820-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428169
NSN
5961-01-042-8169
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 411L-E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00820-002
OVERALL WIDTH ACROSS FLATS: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
UZ9733-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428169
NSN
5961-01-042-8169
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 411L-E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00820-002
OVERALL WIDTH ACROSS FLATS: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
SODSLD-8FS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428172
NSN
5961-01-042-8172
SODSLD-8FS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428172
NSN
5961-01-042-8172
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N967B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428173
NSN
5961-01-042-8173
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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2877245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428173
NSN
5961-01-042-8173
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
DZ780626D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428173
NSN
5961-01-042-8173
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SZG311H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010428173
NSN
5961-01-042-8173
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
20-00765-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010428174
NSN
5961-01-042-8174
20-00765-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010428174
NSN
5961-01-042-8174
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 411L-E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00765-002
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE BRIDGE
Related Searches:
SA4820
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010428174
NSN
5961-01-042-8174
SA4820
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010428174
NSN
5961-01-042-8174
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
III END ITEM IDENTIFICATION: 411L-E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00765-002
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE BRIDGE
Related Searches:
142-501-52
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010428175
NSN
5961-01-042-8175
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
153-0602-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010428176
NSN
5961-01-042-8176
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
FLS012
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010428192
NSN
5961-01-042-8192
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: ANY ACCEPTABLE
OPERATING FREQUENCY: NOT RATED
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.312 INCHES MAXIMUM
OVERALL LENGTH: 0.431 INCHES NOMINAL
Related Searches:
352-7500-291
TRANSISTOR
NSN, MFG P/N
5961010428633
NSN
5961-01-042-8633
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 618-4921-108
MANUFACTURERS CODE: 13499
SPECIAL FEATURES: TRANSISTOR-2N5179
THE MANUFACTURERS DATA:
