My Quote Request
No products added yet
5961-01-044-2639
20 Products
48S137324
TRANSISTOR
NSN, MFG P/N
5961010442639
NSN
5961-01-044-2639
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
0.4M10.6Z2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010439552
NSN
5961-01-043-9552
0.4M10.6Z2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010439552
NSN
5961-01-043-9552
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49671-8548675 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
230607
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010439552
NSN
5961-01-043-9552
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49671-8548675 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
8548675-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010439552
NSN
5961-01-043-9552
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49671-8548675 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ40114A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010439552
NSN
5961-01-043-9552
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49671-8548675 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
4660402-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010439828
NSN
5961-01-043-9828
4660402-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010439828
NSN
5961-01-043-9828
MFG
GE AVIATION SYSTEMS LLC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
K3N8
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010439828
NSN
5961-01-043-9828
MFG
EDAL INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
125874-1
TRANSISTOR
NSN, MFG P/N
5961010439896
NSN
5961-01-043-9896
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER
Related Searches:
15268-002
TRANSISTOR
NSN, MFG P/N
5961010439897
NSN
5961-01-043-9897
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLL
Related Searches:
21011759-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010440182
NSN
5961-01-044-0182
21011759-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010440182
NSN
5961-01-044-0182
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MANUFACTURERS CODE: 81395
MFR SOURCE CONTROLLING REFERENCE: 21011759-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR RECTIFIER BRIDGE THREE PHASE;2.240 IN. MIN AND 2.260 IN. MAX O/A LG;1.870 IN. MIN AND 1.880 IN. MAX DISTANCE CENTER TO CENTER OF 2 MTG HOLES;0.164 IN. MIN AND 0.174 IN. MAX DIA MTG HOLES
Related Searches:
696-3
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010440182
NSN
5961-01-044-0182
696-3
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010440182
NSN
5961-01-044-0182
MFG
MICRO USPD INC
Description
MANUFACTURERS CODE: 81395
MFR SOURCE CONTROLLING REFERENCE: 21011759-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR RECTIFIER BRIDGE THREE PHASE;2.240 IN. MIN AND 2.260 IN. MAX O/A LG;1.870 IN. MIN AND 1.880 IN. MAX DISTANCE CENTER TO CENTER OF 2 MTG HOLES;0.164 IN. MIN AND 0.174 IN. MAX DIA MTG HOLES
Related Searches:
50001293
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010441797
NSN
5961-01-044-1797
50001293
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010441797
NSN
5961-01-044-1797
MFG
APPLIED DEVICES CORP
Description
OVERALL HEIGHT: 0.362 INCHES NOMINAL
OVERALL LENGTH: 0.713 INCHES NOMINAL
OVERALL WIDTH: 0.305 INCHES NOMINAL
SPECIAL FEATURES: TRANSISTOR QUAD,NPN SILICON,14 PIN CERAMIC DUAL IN-LINE PKG; INCL TERMINALS
Related Searches:
48-869567
TRANSISTOR
NSN, MFG P/N
5961010441890
NSN
5961-01-044-1890
MFG
STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: 48R869567
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
M9567
TRANSISTOR
NSN, MFG P/N
5961010441890
NSN
5961-01-044-1890
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 48R869567
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
2N5070
TRANSISTOR
NSN, MFG P/N
5961010441891
NSN
5961-01-044-1891
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
A3099
TRANSISTOR
NSN, MFG P/N
5961010441891
NSN
5961-01-044-1891
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
4710016
TRANSISTOR
NSN, MFG P/N
5961010441892
NSN
5961-01-044-1892
MFG
EIP MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 4710016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 34257
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.000 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
191-0938
RECTIFIER ASSEMBLY
NSN, MFG P/N
5961010442468
NSN
5961-01-044-2468
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: RECTIFIER ASSY
Related Searches:
48S137317
TRANSISTOR
NSN, MFG P/N
5961010442638
NSN
5961-01-044-2638
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SS2711
TRANSISTOR
NSN, MFG P/N
5961010442638
NSN
5961-01-044-2638
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
