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5961-01-063-9270
20 Products
152-0552-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639270
NSN
5961-01-063-9270
152-0552-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639270
NSN
5961-01-063-9270
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JAN2N5241
TRANSISTOR
NSN, MFG P/N
5961010639258
NSN
5961-01-063-9258
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 619172-3
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 37695
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.480 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 37695-619172 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/
Related Searches:
SJ2535
TRANSISTOR
NSN, MFG P/N
5961010639258
NSN
5961-01-063-9258
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 619172-3
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 37695
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.480 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 37695-619172 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/
Related Searches:
STA9377
TRANSISTOR
NSN, MFG P/N
5961010639258
NSN
5961-01-063-9258
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 619172-3
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 37695
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.480 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 37695-619172 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/
Related Searches:
2N6350
TRANSISTOR
NSN, MFG P/N
5961010639259
NSN
5961-01-063-9259
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6350
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/472
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-M
Related Searches:
JAN2N6350
TRANSISTOR
NSN, MFG P/N
5961010639259
NSN
5961-01-063-9259
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6350
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/472
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-M
Related Searches:
2N5908
TRANSISTOR
NSN, MFG P/N
5961010639261
NSN
5961-01-063-9261
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 367.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
57120-0029-00
TRANSISTOR
NSN, MFG P/N
5961010639262
NSN
5961-01-063-9262
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.196 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
TIP147
TRANSISTOR
NSN, MFG P/N
5961010639262
NSN
5961-01-063-9262
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.196 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
10-214228-3P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639263
NSN
5961-01-063-9263
10-214228-3P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639263
NSN
5961-01-063-9263
MFG
AMPHENOL CORPORATION DBA AMPHENOL AEROSPACE INDUSTRIAL
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 1.950 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 623.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
57-3041-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639263
NSN
5961-01-063-9263
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 1.950 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 623.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
GZ60923A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639263
NSN
5961-01-063-9263
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.375 INCHES NOMINAL
OVERALL LENGTH: 1.950 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 623.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
152-0107-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639264
NSN
5961-01-063-9264
152-0107-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639264
NSN
5961-01-063-9264
MFG
SPACELABS-HILLSBORO OPERATIONS SQUIBB VITATEK INC
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
152-0453-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639265
NSN
5961-01-063-9265
152-0453-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639265
NSN
5961-01-063-9265
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
152-0526-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639266
NSN
5961-01-063-9266
152-0526-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639266
NSN
5961-01-063-9266
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SZG20054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639266
NSN
5961-01-063-9266
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
152-0177-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639267
NSN
5961-01-063-9267
152-0177-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639267
NSN
5961-01-063-9267
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
152-0442-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639268
NSN
5961-01-063-9268
152-0442-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639268
NSN
5961-01-063-9268
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
153-0059-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639269
NSN
5961-01-063-9269
153-0059-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639269
NSN
5961-01-063-9269
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
CMX315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010639270
NSN
5961-01-063-9270
MFG
UNITRODE CORP HIGH VOLTAGE DEVICES INC
Description
SEMICONDUCTOR MATERIAL: SILICON
