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5961-01-064-4869
20 Products
10182360-2
TRANSISTOR
NSN, MFG P/N
5961010644869
NSN
5961-01-064-4869
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10182360-2
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
006215
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
006215
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 WIRE HOOK
Related Searches:
682-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
682-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 WIRE HOOK
Related Searches:
705308 ITEM 38
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
705308 ITEM 38
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644209
NSN
5961-01-064-4209
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 WIRE HOOK
Related Searches:
050-0721-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644210
NSN
5961-01-064-4210
050-0721-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644210
NSN
5961-01-064-4210
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
152-0572-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644212
NSN
5961-01-064-4212
152-0572-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644212
NSN
5961-01-064-4212
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1901-0135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644214
NSN
5961-01-064-4214
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE RATING IS MINIMUM; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
5082-5135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644214
NSN
5961-01-064-4214
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE RATING IS MINIMUM; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
1901-0136
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644215
NSN
5961-01-064-4215
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE RATING IS MINIMUM; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
5082-5136
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010644215
NSN
5961-01-064-4215
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGE RATING IS MINIMUM; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
40672
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010644217
NSN
5961-01-064-4217
MFG
INTERSIL CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: SWITCHING
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL AND THREADED STUD
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.422 INCHES MINIMUM AND 0.453 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
Related Searches:
40798
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010644218
NSN
5961-01-064-4218
MFG
INTERSIL CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: SWITCHING
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL AND THREADED STUD
OVERALL LENGTH: 0.422 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.422 INCHES MINIMUM AND 0.453 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
Related Searches:
2899274-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
2899274-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SPECIAL FEATURES: FULL WAVE BRIDGE RECTIFIER;SILICON;1.145 IN. MAX SQUARE;0.193 IN. NOMINAL DIA THRU CENTER HOLE;4 TINNED PLATE TERMINALS;CORROSION RESISTANT SEALED CASE;M55 DEG TO P150 DEG C OPERATING JUNCTION TEMP
Related Searches:
655-324
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
655-324
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: FULL WAVE BRIDGE RECTIFIER;SILICON;1.145 IN. MAX SQUARE;0.193 IN. NOMINAL DIA THRU CENTER HOLE;4 TINNED PLATE TERMINALS;CORROSION RESISTANT SEALED CASE;M55 DEG TO P150 DEG C OPERATING JUNCTION TEMP
Related Searches:
SA3189
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
SA3189
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010644322
NSN
5961-01-064-4322
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: FULL WAVE BRIDGE RECTIFIER;SILICON;1.145 IN. MAX SQUARE;0.193 IN. NOMINAL DIA THRU CENTER HOLE;4 TINNED PLATE TERMINALS;CORROSION RESISTANT SEALED CASE;M55 DEG TO P150 DEG C OPERATING JUNCTION TEMP
Related Searches:
153-0633-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010644400
NSN
5961-01-064-4400
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
153-0613-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010644401
NSN
5961-01-064-4401
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
153-0565-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010644402
NSN
5961-01-064-4402
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
007-0176-00
TRANSISTOR
NSN, MFG P/N
5961010644436
NSN
5961-01-064-4436
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: MPSA70
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.687 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MPSA70
TRANSISTOR
NSN, MFG P/N
5961010644436
NSN
5961-01-064-4436
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: MPSA70
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.687 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
