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5961-01-067-5954
20 Products
2SC1061
TRANSISTOR
NSN, MFG P/N
5961010675954
NSN
5961-01-067-5954
MFG
SONY CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872931616
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
4872919456
TRANSISTOR
NSN, MFG P/N
5961010674335
NSN
5961-01-067-4335
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872919456
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
4872919457
TRANSISTOR
NSN, MFG P/N
5961010674336
NSN
5961-01-067-4336
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872919457
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
2SC945K
TRANSISTOR
NSN, MFG P/N
5961010674337
NSN
5961-01-067-4337
MFG
SONY CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872919458
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
4872919458
TRANSISTOR
NSN, MFG P/N
5961010674337
NSN
5961-01-067-4337
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872919458
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
4872930016
TRANSISTOR
NSN, MFG P/N
5961010674338
NSN
5961-01-067-4338
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872930016
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
2SC1116
TRANSISTOR
NSN, MFG P/N
5961010674339
NSN
5961-01-067-4339
MFG
SONY CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872931163
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
4872931163
TRANSISTOR
NSN, MFG P/N
5961010674339
NSN
5961-01-067-4339
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4872931163
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,PD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
1N6060A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674634
NSN
5961-01-067-4634
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6060A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507/17/ GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTI
Related Searches:
JAN1N6060A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674634
NSN
5961-01-067-4634
JAN1N6060A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674634
NSN
5961-01-067-4634
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6060A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507/17/ GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTI
Related Searches:
S5005371
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674634
NSN
5961-01-067-4634
MFG
ROLLS-ROYCE PLC NAVAL MARINE
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6060A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507/17/ GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTI
Related Searches:
10111802
TRANSISTOR
NSN, MFG P/N
5961010674783
NSN
5961-01-067-4783
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.807 INCHES MINIMUM AND 0.908 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND
~1: EMITTER
Related Searches:
KR-1092
TRANSISTOR
NSN, MFG P/N
5961010674783
NSN
5961-01-067-4783
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.807 INCHES MINIMUM AND 0.908 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.420 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND
~1: EMITTER
Related Searches:
4809-413153
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674942
NSN
5961-01-067-4942
4809-413153
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674942
NSN
5961-01-067-4942
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.30 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
16102-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674945
NSN
5961-01-067-4945
MFG
DYNALEC CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5802
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JAN1N5802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010674945
NSN
5961-01-067-4945
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5802
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
44-054259-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
44-054259-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR
Related Searches:
DH34670/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
DH34670/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR
Related Searches:
HQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
HQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010674961
NSN
5961-01-067-4961
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR
Related Searches:
797411-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010674962
NSN
5961-01-067-4962
797411-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010674962
NSN
5961-01-067-4962
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: POWER SUPPLY SUBASSEMBLY
