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5961-01-073-6651
20 Products
144BBA135
TRANSISTOR
NSN, MFG P/N
5961010736651
NSN
5961-01-073-6651
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.195 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM COLLECTOR TO
Related Searches:
571825-1
TRANSISTOR
NSN, MFG P/N
5961010736651
NSN
5961-01-073-6651
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.195 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM COLLECTOR TO
Related Searches:
642AS2842
TRANSISTOR
NSN, MFG P/N
5961010736651
NSN
5961-01-073-6651
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.195 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM COLLECTOR TO
Related Searches:
SCA15442
TRANSISTOR
NSN, MFG P/N
5961010736651
NSN
5961-01-073-6651
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 6.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.195 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM COLLECTOR TO
Related Searches:
571806-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010736653
NSN
5961-01-073-6653
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.111 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
642AS2823
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010736653
NSN
5961-01-073-6653
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.111 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
642AS2912-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010736654
NSN
5961-01-073-6654
642AS2912-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010736654
NSN
5961-01-073-6654
MFG
NAVAL AIR SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
80918-2
TRANSISTOR
NSN, MFG P/N
5961010736801
NSN
5961-01-073-6801
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80918-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 07148-80918 DRAWING
V
Related Searches:
85AJ137
TRANSISTOR
NSN, MFG P/N
5961010736801
NSN
5961-01-073-6801
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80918-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 07148-80918 DRAWING
V
Related Searches:
NES6005
TRANSISTOR
NSN, MFG P/N
5961010736801
NSN
5961-01-073-6801
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80918-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 07148-80918 DRAWING
V
Related Searches:
PP8804
TRANSISTOR
NSN, MFG P/N
5961010736801
NSN
5961-01-073-6801
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80918-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 07148-80918 DRAWING
V
Related Searches:
STJ1002
TRANSISTOR
NSN, MFG P/N
5961010736801
NSN
5961-01-073-6801
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80918-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 07148-80918 DRAWING
V
Related Searches:
C3-28
TRANSISTOR
NSN, MFG P/N
5961010737094
NSN
5961-01-073-7094
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: BRACKET
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 BRACKET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
11780328
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
11780328
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 70834-1
MAJOR COMPONENTS: COLLECTOR 3;BASE 2;EMITTER 1;INDEX TAB 1
MANUFACTURERS CODE: 01295
SPECIAL FEATURES: MATERIAL SHALL BE KOVAR;LEAD FINISH SHALL NOT BE HOT SOLDER DIP OR BRIGHT ACID TIN PLATE;LENGTH .280 IN.;WIDTH .209 IN.;MIN.;.230 IN.MAX
THE MANUFACTURERS DATA:
Related Searches:
70834-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
70834-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 70834-1
MAJOR COMPONENTS: COLLECTOR 3;BASE 2;EMITTER 1;INDEX TAB 1
MANUFACTURERS CODE: 01295
SPECIAL FEATURES: MATERIAL SHALL BE KOVAR;LEAD FINISH SHALL NOT BE HOT SOLDER DIP OR BRIGHT ACID TIN PLATE;LENGTH .280 IN.;WIDTH .209 IN.;MIN.;.230 IN.MAX
THE MANUFACTURERS DATA:
Related Searches:
PC70834-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
PC70834-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010737532
NSN
5961-01-073-7532
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
DESIGN CONTROL REFERENCE: 70834-1
MAJOR COMPONENTS: COLLECTOR 3;BASE 2;EMITTER 1;INDEX TAB 1
MANUFACTURERS CODE: 01295
SPECIAL FEATURES: MATERIAL SHALL BE KOVAR;LEAD FINISH SHALL NOT BE HOT SOLDER DIP OR BRIGHT ACID TIN PLATE;LENGTH .280 IN.;WIDTH .209 IN.;MIN.;.230 IN.MAX
THE MANUFACTURERS DATA:
Related Searches:
144SEB145
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
144SEB145
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
MFG
SOLITRON DEVICES INC.
Description
SPECIAL FEATURES: COLLECTOR IS ELECTRICALLY SHORTEDTO THE CASE;PIN 1 BASE;PIN 2 EMITTER;CASE COLLECTOR;DIAMETER .151 IN. MIN..161 IN.MAX.;LENGTH 1.550 IN.;WIDTH 1.050 IN.
Related Searches:
PC71595-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
PC71595-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
SPECIAL FEATURES: COLLECTOR IS ELECTRICALLY SHORTEDTO THE CASE;PIN 1 BASE;PIN 2 EMITTER;CASE COLLECTOR;DIAMETER .151 IN. MIN..161 IN.MAX.;LENGTH 1.550 IN.;WIDTH 1.050 IN.
Related Searches:
SJ6755H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
SJ6755H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIAL FEATURES: COLLECTOR IS ELECTRICALLY SHORTEDTO THE CASE;PIN 1 BASE;PIN 2 EMITTER;CASE COLLECTOR;DIAMETER .151 IN. MIN..161 IN.MAX.;LENGTH 1.550 IN.;WIDTH 1.050 IN.
Related Searches:
STA2000A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
STA2000A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010737533
NSN
5961-01-073-7533
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
SPECIAL FEATURES: COLLECTOR IS ELECTRICALLY SHORTEDTO THE CASE;PIN 1 BASE;PIN 2 EMITTER;CASE COLLECTOR;DIAMETER .151 IN. MIN..161 IN.MAX.;LENGTH 1.550 IN.;WIDTH 1.050 IN.
