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5961-01-074-2236

20 Products

SD5178

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742236

NSN

5961-01-074-2236

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SD5178

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742236

NSN

5961-01-074-2236

MFG

OPTEK TECHNOLOGY INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

10357-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742237

NSN

5961-01-074-2237

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10357-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742237

NSN

5961-01-074-2237

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

95511-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742239

NSN

5961-01-074-2239

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95511-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742239

NSN

5961-01-074-2239

MFG

CALCOMP INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

168-205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742243

NSN

5961-01-074-2243

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168-205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742243

NSN

5961-01-074-2243

MFG

AUTEK SYSTEMS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

89470334

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742244

NSN

5961-01-074-2244

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89470334

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742244

NSN

5961-01-074-2244

MFG

THALES AIR SYSTEMS SA

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.580 INCHES MAXIMUM
OVERALL LENGTH: 1.452 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

FBL-00-122

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742244

NSN

5961-01-074-2244

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FBL-00-122

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742244

NSN

5961-01-074-2244

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.580 INCHES MAXIMUM
OVERALL LENGTH: 1.452 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

K012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742245

NSN

5961-01-074-2245

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K012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742245

NSN

5961-01-074-2245

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

642AS4222

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742246

NSN

5961-01-074-2246

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642AS4222

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742246

NSN

5961-01-074-2246

MFG

NAVAL AIR SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-642AS4222 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

1853-0215

TRANSISTOR

NSN, MFG P/N

5961010742666

NSN

5961-01-074-2666

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1853-0215

TRANSISTOR

NSN, MFG P/N

5961010742666

NSN

5961-01-074-2666

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

39496

TRANSISTOR

NSN, MFG P/N

5961010742666

NSN

5961-01-074-2666

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39496

TRANSISTOR

NSN, MFG P/N

5961010742666

NSN

5961-01-074-2666

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

SCSFF15R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742667

NSN

5961-01-074-2667

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SCSFF15R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010742667

NSN

5961-01-074-2667

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

862024-44

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742706

NSN

5961-01-074-2706

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862024-44

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742706

NSN

5961-01-074-2706

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

862033-14

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742707

NSN

5961-01-074-2707

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862033-14

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742707

NSN

5961-01-074-2707

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

861607-333

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742708

NSN

5961-01-074-2708

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861607-333

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010742708

NSN

5961-01-074-2708

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

862124-34

TRANSISTOR

NSN, MFG P/N

5961010742903

NSN

5961-01-074-2903

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862124-34

TRANSISTOR

NSN, MFG P/N

5961010742903

NSN

5961-01-074-2903

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

014-590

TRANSISTOR

NSN, MFG P/N

5961010742904

NSN

5961-01-074-2904

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014-590

TRANSISTOR

NSN, MFG P/N

5961010742904

NSN

5961-01-074-2904

MFG

AMPEX SYSTEMS CORP

S6320-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010743099

NSN

5961-01-074-3099

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S6320-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010743099

NSN

5961-01-074-3099

MFG

ST-SEMICON INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.781 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG

160-077

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743100

NSN

5961-01-074-3100

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160-077

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743100

NSN

5961-01-074-3100

MFG

AUTEK SYSTEMS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

2888297-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743107

NSN

5961-01-074-3107

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2888297-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743107

NSN

5961-01-074-3107

MFG

NAVAL SEA SYSTEMS COMMAND

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

2888297-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743107

NSN

5961-01-074-3107

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2888297-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010743107

NSN

5961-01-074-3107

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON