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5961-01-074-6575

20 Products

2N5369

TRANSISTOR

NSN, MFG P/N

5961010746575

NSN

5961-01-074-6575

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2N5369

TRANSISTOR

NSN, MFG P/N

5961010746575

NSN

5961-01-074-6575

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

A177A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010746576

NSN

5961-01-074-6576

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A177A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010746576

NSN

5961-01-074-6576

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

(NON-CORE DATA) FRAGILITY FACTOR: RUGGED
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB W/WIRE LEAD AND 1 THREADED STUD

A177M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010746576

NSN

5961-01-074-6576

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A177M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010746576

NSN

5961-01-074-6576

MFG

POWEREX INC

Description

(NON-CORE DATA) FRAGILITY FACTOR: RUGGED
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB W/WIRE LEAD AND 1 THREADED STUD

C386T

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010746787

NSN

5961-01-074-6787

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C386T

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010746787

NSN

5961-01-074-6787

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

III END ITEM IDENTIFICATION: POWER CONDITIONING SYSTEM,PCS

2N6371

TRANSISTOR

NSN, MFG P/N

5961010747038

NSN

5961-01-074-7038

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2N6371

TRANSISTOR

NSN, MFG P/N

5961010747038

NSN

5961-01-074-7038

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 7.00 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 66.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6416 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE V

2N6518

TRANSISTOR

NSN, MFG P/N

5961010747559

NSN

5961-01-074-7559

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2N6518

TRANSISTOR

NSN, MFG P/N

5961010747559

NSN

5961-01-074-7559

MFG

FREESCALE SEMICONDUCTOR INC.

2223486-1

TRANSISTOR

NSN, MFG P/N

5961010747564

NSN

5961-01-074-7564

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2223486-1

TRANSISTOR

NSN, MFG P/N

5961010747564

NSN

5961-01-074-7564

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2223486-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER

CD5916

TRANSISTOR

NSN, MFG P/N

5961010747564

NSN

5961-01-074-7564

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CD5916

TRANSISTOR

NSN, MFG P/N

5961010747564

NSN

5961-01-074-7564

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2223486-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER

720033-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

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720033-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

MFG

ENGINEERED MAGNETICS INC DBA AAP DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SA6084
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.200 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC

SA6084

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

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SA6084

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SA6084
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.200 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC

SCSL05R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

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SCSL05R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747566

NSN

5961-01-074-7566

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: SA6084
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14099
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.200 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC

C448PB

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747567

NSN

5961-01-074-7567

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C448PB

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747567

NSN

5961-01-074-7567

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: C448PB
III END ITEM IDENTIFICATION: POWER CONDITIONING SYSTEM, FA-10062 (PCS)
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL

4803-02-2109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

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4803-02-2109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

MFG

WAVETEK U S INC DIV OF WAVETEK CORP

Description

CAPACITANCE RATING IN PICOFARADS: 33.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

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614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

MFG

NTE ELECTRONICS INC SUB OF SOLID STATE INC

Description

CAPACITANCE RATING IN PICOFARADS: 33.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

A2N20001329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

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A2N20001329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

MFG

SELEX GALILEO LTD

Description

CAPACITANCE RATING IN PICOFARADS: 33.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

MV2109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

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MV2109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010747922

NSN

5961-01-074-7922

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CAPACITANCE RATING IN PICOFARADS: 33.0 NOMINAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

NL-C45B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747923

NSN

5961-01-074-7923

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NL-C45B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747923

NSN

5961-01-074-7923

MFG

NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM PEAK POSITIVE GATE VOLTAGE

C228A3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747924

NSN

5961-01-074-7924

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C228A3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010747924

NSN

5961-01-074-7924

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL ON-STATE CURRENT, DC
DESIGN CONTROL REFERENCE: C228A3
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 09214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.585 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REVERSE VOLTAGE, PEAK

7030027

TRIPLER DIODE

NSN, MFG P/N

5961010748010

NSN

5961-01-074-8010

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7030027

TRIPLER DIODE

NSN, MFG P/N

5961010748010

NSN

5961-01-074-8010

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: EPOXY ENCAPSULATED; TWO 1.000 INCHE MIN LG WIRE LEADS; 2.480 INCHES LG BODY; 0.300 INCH MAX DIA; 1000 HOURS OPERATIONAL LIFE AT MAX RATED POWER; 20000 HZ SINE WAVE RECTIFYING CAPABILITY

MH6F

TRIPLER DIODE

NSN, MFG P/N

5961010748010

NSN

5961-01-074-8010

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MH6F

TRIPLER DIODE

NSN, MFG P/N

5961010748010

NSN

5961-01-074-8010

MFG

RECTIFIER COMPONENTS CORP

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: EPOXY ENCAPSULATED; TWO 1.000 INCHE MIN LG WIRE LEADS; 2.480 INCHES LG BODY; 0.300 INCH MAX DIA; 1000 HOURS OPERATIONAL LIFE AT MAX RATED POWER; 20000 HZ SINE WAVE RECTIFYING CAPABILITY