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5961-01-076-7593

20 Products

580-315

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010767593

NSN

5961-01-076-7593

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580-315

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010767593

NSN

5961-01-076-7593

MFG

AMPEX SYSTEMS CORP

580-357

TRANSISTOR

NSN, MFG P/N

5961010767715

NSN

5961-01-076-7715

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580-357

TRANSISTOR

NSN, MFG P/N

5961010767715

NSN

5961-01-076-7715

MFG

AMPEX SYSTEMS CORP

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.628 INCHES MINIMUM AND 0.658 INCHES MAXIMUM
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 RIBBON

MJE102

TRANSISTOR

NSN, MFG P/N

5961010767715

NSN

5961-01-076-7715

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MJE102

TRANSISTOR

NSN, MFG P/N

5961010767715

NSN

5961-01-076-7715

MFG

FREESCALE SEMICONDUCTOR INC.

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.628 INCHES MINIMUM AND 0.658 INCHES MAXIMUM
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 RIBBON

580-358

TRANSISTOR

NSN, MFG P/N

5961010767716

NSN

5961-01-076-7716

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580-358

TRANSISTOR

NSN, MFG P/N

5961010767716

NSN

5961-01-076-7716

MFG

AMPEX SYSTEMS CORP

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.628 INCHES MINIMUM AND 0.658 INCHES MAXIMUM
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 RIBBON

MJE202

TRANSISTOR

NSN, MFG P/N

5961010767716

NSN

5961-01-076-7716

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MJE202

TRANSISTOR

NSN, MFG P/N

5961010767716

NSN

5961-01-076-7716

MFG

FREESCALE SEMICONDUCTOR INC.

Description

MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.628 INCHES MINIMUM AND 0.658 INCHES MAXIMUM
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 RIBBON

1S1555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767718

NSN

5961-01-076-7718

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1S1555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767718

NSN

5961-01-076-7718

MFG

TEAC CORPORATION

Description

DESIGN CONTROL REFERENCE: 4871981555
III END ITEM IDENTIFICATION: V4200G
MANUFACTURERS CODE: S0633
THE MANUFACTURERS DATA:

013-646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767719

NSN

5961-01-076-7719

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013-646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767719

NSN

5961-01-076-7719

MFG

AMPEX SYSTEMS CORP

Description

MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.470 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PORM10 PCT. TOLERANCE
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF

1N3311A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767719

NSN

5961-01-076-7719

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1N3311A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767719

NSN

5961-01-076-7719

MFG

FREESCALE SEMICONDUCTOR INC.

Description

MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.470 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PORM10 PCT. TOLERANCE
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF

013-430

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767720

NSN

5961-01-076-7720

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013-430

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767720

NSN

5961-01-076-7720

MFG

AMPEX SYSTEMS CORP

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES NOMINAL
OVERALL LENGTH: 0.256 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PORM10 PCT. TOLERANCE
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N3795A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767720

NSN

5961-01-076-7720

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1N3795A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767720

NSN

5961-01-076-7720

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES NOMINAL
OVERALL LENGTH: 0.256 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PORM10 PCT. TOLERANCE
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

101095-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

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101095-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

MFG

AERO SYSTEMS ENGINEERING INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

102032-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

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102032-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

MFG

SELEX SISTEMI INTEGRATI INC. DIV SELEX SISTEMI INTEGRATI INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N5231A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

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1N5231A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

310143

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

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310143

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

MFG

CALIFORNIA INSTRUMENTS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

880196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

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880196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767721

NSN

5961-01-076-7721

MFG

NAI TECHNOLOGIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

013-816

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010767723

NSN

5961-01-076-7723

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013-816

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010767723

NSN

5961-01-076-7723

MFG

AMPEX SYSTEMS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N3892

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010767723

NSN

5961-01-076-7723

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1N3892

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010767723

NSN

5961-01-076-7723

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N4099

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767955

NSN

5961-01-076-7955

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JAN1N4099

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767955

NSN

5961-01-076-7955

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02738; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE_!!

L02738

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767955

NSN

5961-01-076-7955

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L02738

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767955

NSN

5961-01-076-7955

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02738; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE_!!

JANTX1N5196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767956

NSN

5961-01-076-7956

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JANTX1N5196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010767956

NSN

5961-01-076-7956

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5196
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/118
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/118 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 225.0 MAXIMUM WORKING PEAK REVERS