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5961-01-108-8251
20 Products
DS051000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011088251
NSN
5961-01-108-8251
MFG
POWER/MATE CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
223096
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011088252
NSN
5961-01-108-8252
MFG
NACCO MATERIALS HANDLING GROUP INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
201-456-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011088254
NSN
5961-01-108-8254
201-456-1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011088254
NSN
5961-01-108-8254
MFG
L-3 COMMUNICATIONS MICRODYNE
Description
COAXIAL CONNECTOR SERIES DESIGNATION: ANY ACCEPTABLE
INPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
Related Searches:
201-461
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011088255
NSN
5961-01-108-8255
MFG
L-3 COMMUNICATIONS MICRODYNE
Description
COAXIAL CONNECTOR SERIES DESIGNATION: ANY ACCEPTABLE
INPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.120 INCHES NOMINAL
Related Searches:
MIS21378-1
TRANSISTOR
NSN, MFG P/N
5961011088579
NSN
5961-01-108-8579
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS21378-1
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1202383-1
TRANSISTOR
NSN, MFG P/N
5961011088581
NSN
5961-01-108-8581
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
2N3251A
TRANSISTOR
NSN, MFG P/N
5961011088581
NSN
5961-01-108-8581
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
E107
TRANSISTOR
NSN, MFG P/N
5961011088582
NSN
5961-01-108-8582
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
DKV-6525A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011088585
NSN
5961-01-108-8585
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
2607324
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088746
NSN
5961-01-108-8746
2607324
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088746
NSN
5961-01-108-8746
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 610.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
2N3805A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088746
NSN
5961-01-108-8746
2N3805A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088746
NSN
5961-01-108-8746
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 610.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
1855-0231
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088747
NSN
5961-01-108-8747
1855-0231
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088747
NSN
5961-01-108-8747
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ALL-WEATHER ANTI-SHIP HARPOON (AGM-84) MISSLE.
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
AD30/14
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088747
NSN
5961-01-108-8747
AD30/14
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088747
NSN
5961-01-108-8747
MFG
MOSITES G A CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ALL-WEATHER ANTI-SHIP HARPOON (AGM-84) MISSLE.
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
2601186
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
2601186
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 2601186
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
5930276-202
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
5930276-202
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 2601186
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
MHQ2907
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MHQ2907
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 2601186
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
SS60074-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
SS60074-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 2601186
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
VA75-0160-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
VA75-0160-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011088766
NSN
5961-01-108-8766
MFG
SELEX GALILEO LTD
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80064
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 2601186
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
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2N5911
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011089288
NSN
5961-01-108-9288
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
772068-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011089288
NSN
5961-01-108-9288
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
