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5961-01-107-8074
20 Products
2N682
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078074
NSN
5961-01-107-8074
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
3006365-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078074
NSN
5961-01-107-8074
3006365-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078074
NSN
5961-01-107-8074
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
68-6124
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078074
NSN
5961-01-107-8074
68-6124
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078074
NSN
5961-01-107-8074
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
220-11152-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078267
NSN
5961-01-107-8267
220-11152-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078267
NSN
5961-01-107-8267
MFG
THE BOEING COMPANY DBA BOEING
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: MOUNTING HARDWARE
III END ITEM IDENTIFICATION: AN/GSM-243
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81205-220-11152 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB W/WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
90339-001
TRANSISTOR
NSN, MFG P/N
5961011078661
NSN
5961-01-107-8661
MFG
TELEFILE COMPUTER PRODUCTS INC
Description
TRANSISTOR
Related Searches:
44A356435-014
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078665
NSN
5961-01-107-8665
44A356435-014
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078665
NSN
5961-01-107-8665
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.140 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
44A356435P14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078665
NSN
5961-01-107-8665
44A356435P14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011078665
NSN
5961-01-107-8665
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.140 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
3400410-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011078668
NSN
5961-01-107-8668
3400410-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011078668
NSN
5961-01-107-8668
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
COMPONENT NAME AND QUANTITY: 16 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.570 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 10 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
201-4654
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078670
NSN
5961-01-107-8670
MFG
DDC PERTEC PERIPHERALS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
934A171-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078959
NSN
5961-01-107-8959
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N649-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
A26309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078959
NSN
5961-01-107-8959
MFG
MBDA UK LTD
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N649-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTXV1N649-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078959
NSN
5961-01-107-8959
JANTXV1N649-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078959
NSN
5961-01-107-8959
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N649-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/240
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTXV1N4623
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078960
NSN
5961-01-107-8960
JANTXV1N4623
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078960
NSN
5961-01-107-8960
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 87.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4623
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CH
Related Searches:
JANTXV1N4620
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078961
NSN
5961-01-107-8961
JANTXV1N4620
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078961
NSN
5961-01-107-8961
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 116.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4620
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM;NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CAN'T CHANGE CRITICALITY CODE TO REFLECT NUCLEAR HARDNESS; JUNCTION PATTERN ARRANGEMENT: PIN
SPECIFICATION/STANDARD DATA: 81349-MIL
Related Searches:
1N973B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078963
NSN
5961-01-107-8963
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 12.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N973B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 T
Related Searches:
B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011078963
NSN
5961-01-107-8963
MFG
HYSON ELECTRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 12.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N973B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 T
Related Searches:
140183
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011079021
NSN
5961-01-107-9021
140183
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011079021
NSN
5961-01-107-9021
MFG
SCIENTIFIC ATLANTA INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL ALL SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.417 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 0.787 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 2 PIN
TEST DATA DOCUMENT: 10110-140183 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAX
Related Searches:
SKKT40/12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011079021
NSN
5961-01-107-9021
SKKT40/12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011079021
NSN
5961-01-107-9021
MFG
SEMIKRON INTL INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL ALL SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.417 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 0.787 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 2 PIN
TEST DATA DOCUMENT: 10110-140183 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAX
Related Searches:
R36130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011079023
NSN
5961-01-107-9023
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.437 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.682 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.00 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.25 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
14153
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011079229
NSN
5961-01-107-9229
14153
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011079229
NSN
5961-01-107-9229
MFG
KURZ & ROOT GENERATOR COMPANY LLC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.813 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
