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5961-01-181-5297
20 Products
AT4646
TRANSISTOR
NSN, MFG P/N
5961011815297
NSN
5961-01-181-5297
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
267748
TRANSISTOR
NSN, MFG P/N
5961011815625
NSN
5961-01-181-5625
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITT
Related Searches:
RT8832
TRANSISTOR
NSN, MFG P/N
5961011815625
NSN
5961-01-181-5625
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITT
Related Searches:
ST4629
TRANSISTOR
NSN, MFG P/N
5961011815625
NSN
5961-01-181-5625
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITT
Related Searches:
723087-4
TRANSISTOR
NSN, MFG P/N
5961011815626
NSN
5961-01-181-5626
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-723087-4 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -550.0 MAX
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SPT5096
TRANSISTOR
NSN, MFG P/N
5961011815626
NSN
5961-01-181-5626
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-723087-4 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -550.0 MAX
Related Searches:
60-4255
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011815698
NSN
5961-01-181-5698
MFG
POWCON INC
Description
SEMICONDUCTOR DEVIC
Related Searches:
478787-4
TRANSISTOR
NSN, MFG P/N
5961011815713
NSN
5961-01-181-5713
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
4900P6008-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815715
NSN
5961-01-181-5715
4900P6008-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815715
NSN
5961-01-181-5715
MFG
L-3 COMMUNICATIONS WESTWOOD CORPORATION DBA EDI DIVISION DIV TANO DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
60-4225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815716
NSN
5961-01-181-5716
MFG
POWCON INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
161119-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815717
NSN
5961-01-181-5717
161119-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815717
NSN
5961-01-181-5717
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6398-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815717
NSN
5961-01-181-5717
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6100116-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815718
NSN
5961-01-181-5718
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
DT100547-111S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815718
NSN
5961-01-181-5718
DT100547-111S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815718
NSN
5961-01-181-5718
MFG
SDI INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
DVH6764-88
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815718
NSN
5961-01-181-5718
DVH6764-88
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815718
NSN
5961-01-181-5718
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
6100126-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DMS 91063B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
DMS 91063B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DP-15013-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
DP-15013-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
MFG
SDI INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
QPND-4419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815719
NSN
5961-01-181-5719
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
161119-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815740
NSN
5961-01-181-5740
161119-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011815740
NSN
5961-01-181-5740
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
SPECIAL FEATURES: PINDIODE P/N 161195-001 AND SET SCREW
