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5961-01-184-2838
20 Products
29019-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011842838
NSN
5961-01-184-2838
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 34.40 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DESIGN CONTROL REFERENCE: 29019-007
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 08748
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
29019-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011842839
NSN
5961-01-184-2839
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 22.20 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DESIGN CONTROL REFERENCE: 29019-006
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 08748
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 42.3 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 51.7 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
29019-008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011842840
NSN
5961-01-184-2840
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 29019-008
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 08748
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 6.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
635A827H01
DIODE
NSN, MFG P/N
5961011843237
NSN
5961-01-184-3237
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DIODE
Related Searches:
152-0339-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011843270
NSN
5961-01-184-3270
152-0339-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011843270
NSN
5961-01-184-3270
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D113-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011843468
NSN
5961-01-184-3468
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.4 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
DI13-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011843468
NSN
5961-01-184-3468
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.4 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MC6782
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011844062
NSN
5961-01-184-4062
MFG
AIR FORCE UNITED STATES DEPARTMENT OF THE DBA TINKER AFB OC ALC DSP
Description
III END ITEM IDENTIFICATION: B-1B
Related Searches:
5350-648
TRANSISTOR
NSN, MFG P/N
5961011845105
NSN
5961-01-184-5105
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
MS2401-1
TRANSISTOR
NSN, MFG P/N
5961011845105
NSN
5961-01-184-5105
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
3130105G001
TRANSISTOR
NSN, MFG P/N
5961011845192
NSN
5961-01-184-5192
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: 3130105G001
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 28527
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
SM-A-852637
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845219
NSN
5961-01-184-5219
SM-A-852637
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845219
NSN
5961-01-184-5219
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.117 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.186 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN2N6301
TRANSISTOR
NSN, MFG P/N
5961011845281
NSN
5961-01-184-5281
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6301
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/539
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 32.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
2N6448
TRANSISTOR
NSN, MFG P/N
5961011845585
NSN
5961-01-184-5585
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
TRANSISTOR
Related Searches:
UPT114
TRANSISTOR
NSN, MFG P/N
5961011845714
NSN
5961-01-184-5714
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: UPT114
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 12969
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 850.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.071 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
446023-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845715
NSN
5961-01-184-5715
446023-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845715
NSN
5961-01-184-5715
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 2.334 INCHES NOMINAL
OVERALL WIDTH: 1.251 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; METAL CASE ENCLOSURE; 0.750-16 MOUNTINGSTUD; REFERENCE DATA, 1A1A5CR1, TI 6820.2, FA9996, VORTAC, VOR/DME, VOR EQUIPMENT, SEC 8, VOL 8, PG 8-33
Related Searches:
R6001225XXYA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845715
NSN
5961-01-184-5715
R6001225XXYA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011845715
NSN
5961-01-184-5715
MFG
POWEREX
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 2.334 INCHES NOMINAL
OVERALL WIDTH: 1.251 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; METAL CASE ENCLOSURE; 0.750-16 MOUNTINGSTUD; REFERENCE DATA, 1A1A5CR1, TI 6820.2, FA9996, VORTAC, VOR/DME, VOR EQUIPMENT, SEC 8, VOL 8, PG 8-33
Related Searches:
CP302
TRANSISTOR
NSN, MFG P/N
5961011846228
NSN
5961-01-184-6228
MFG
PHILIPS SEMICONDUCTORS INC
Description
TRANSISTOR
Related Searches:
1000075-99
TRANSISTOR
NSN, MFG P/N
5961011846231
NSN
5961-01-184-6231
MFG
SIERRA SCIENTIFIC CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM GATE CURRENT AND 1.00 NANOAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
J310-1B
TRANSISTOR
NSN, MFG P/N
5961011846231
NSN
5961-01-184-6231
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM GATE CURRENT AND 1.00 NANOAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.594 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM DRAIN TO GATE VOLTAGE
