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5961-01-206-5742
20 Products
7121453-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012065742
NSN
5961-01-206-5742
7121453-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012065742
NSN
5961-01-206-5742
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
III END ITEM IDENTIFICATION: TEST SET MEMORY STACK
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; DIODES 16
Related Searches:
019-005579-001
TRANSISTOR
NSN, MFG P/N
5961012067539
NSN
5961-01-206-7539
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: AN/ALQ-161;B-1B ACFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.460 INCHES MAXIMUM
SPECIAL FEATURES: SELECTED ITEM FROM PART NUMBER UZ7712; FSCM 12969
Related Searches:
019-005582-001
TRANSISTOR
NSN, MFG P/N
5961012067540
NSN
5961-01-206-7540
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: AN/ALQ-161;B-1B ACFT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SPECIAL FEATURES: ITEM IS A SELECTED ITEM FROM PARTNUMBER 2N5056;FSCM 27014
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
638-7395-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012068988
NSN
5961-01-206-8988
638-7395-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012068988
NSN
5961-01-206-8988
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
31169-502
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012069198
NSN
5961-01-206-9198
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
31169-505
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012069198
NSN
5961-01-206-9198
MFG
GOODRICH CORPORATION DBA GOODRICH AERONAUTICAL
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
12CTQ040
TRANSISTOR
NSN, MFG P/N
5961012069446
NSN
5961-01-206-9446
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
886164
TRANSISTOR
NSN, MFG P/N
5961012069446
NSN
5961-01-206-9446
MFG
NAI TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
USD640C
TRANSISTOR
NSN, MFG P/N
5961012069446
NSN
5961-01-206-9446
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N6061A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012069447
NSN
5961-01-206-9447
JANTX1N6061A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012069447
NSN
5961-01-206-9447
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6061A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST
Related Searches:
2CF405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012069968
NSN
5961-01-206-9968
MFG
OSHKOSH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3490564
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012069968
NSN
5961-01-206-9968
MFG
CARGOTEC USA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
81A5034A1021
TRANSISTOR
NSN, MFG P/N
5961012070939
NSN
5961-01-207-0939
MFG
MARINE CORPS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SJ4639H
TRANSISTOR
NSN, MFG P/N
5961012070939
NSN
5961-01-207-0939
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
JANTXV1N4976
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012070940
NSN
5961-01-207-0940
JANTXV1N4976
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012070940
NSN
5961-01-207-0940
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4976
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTA
Related Searches:
581R513H02
DIODE
NSN, MFG P/N
5961012071257
NSN
5961-01-207-1257
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DIODE
Related Searches:
581R518H02
DIODE
NSN, MFG P/N
5961012071258
NSN
5961-01-207-1258
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DIODE
Related Searches:
3870-90
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012071616
NSN
5961-01-207-1616
MFG
HICKOK INCORPORATED
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: MATCHED FORWARD RESISTANCE
Related Searches:
10270092-2
TRANSISTOR
NSN, MFG P/N
5961012072892
NSN
5961-01-207-2892
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10270092-2
III END ITEM IDENTIFICATION: 1430-01-106-8714
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-10270092-2 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
SD1244-12H
TRANSISTOR
NSN, MFG P/N
5961012072892
NSN
5961-01-207-2892
MFG
MICROSEMI CORP. - MONTGOMERYVILLE
Description
DESIGN CONTROL REFERENCE: 10270092-2
III END ITEM IDENTIFICATION: 1430-01-106-8714
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-10270092-2 DRAWING
THE MANUFACTURERS DATA:
