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5961-01-077-2945

20 Products

MJ10004

TRANSISTOR

NSN, MFG P/N

5961010772945

NSN

5961-01-077-2945

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MJ10004

TRANSISTOR

NSN, MFG P/N

5961010772945

NSN

5961-01-077-2945

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM EMITTER

JANTX2N4856

TRANSISTOR

NSN, MFG P/N

5961010772946

NSN

5961-01-077-2946

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JANTX2N4856

TRANSISTOR

NSN, MFG P/N

5961010772946

NSN

5961-01-077-2946

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02709; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM_!!

L02709

TRANSISTOR

NSN, MFG P/N

5961010772946

NSN

5961-01-077-2946

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L02709

TRANSISTOR

NSN, MFG P/N

5961010772946

NSN

5961-01-077-2946

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02709; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM_!!

775194A0153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

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775194A0153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

MFG

MARINE CORPS

Description

CURRENT RATING PER CHARACTERISTIC: 157.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 100.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 80372-775194A0153 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

A187A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

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A187A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 157.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 100.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 80372-775194A0153 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

R5020110FJWA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

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R5020110FJWA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 157.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 100.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 80372-775194A0153 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

R5020110FSWA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

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R5020110FSWA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010772947

NSN

5961-01-077-2947

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 157.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 100.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 80372-775194A0153 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

FBM-Z165

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773253

NSN

5961-01-077-3253

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FBM-Z165

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773253

NSN

5961-01-077-3253

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N5649

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773255

NSN

5961-01-077-3255

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1N5649

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773255

NSN

5961-01-077-3255

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
OVERALL WIDTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM

98471-74009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773255

NSN

5961-01-077-3255

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98471-74009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773255

NSN

5961-01-077-3255

MFG

SELEX GALILEO LTD

Description

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
OVERALL WIDTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM

2435418-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773256

NSN

5961-01-077-3256

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2435418-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773256

NSN

5961-01-077-3256

MFG

HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV SENSING & CONTROL

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19315-2435418 DRAWING

C4467-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773256

NSN

5961-01-077-3256

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C4467-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773256

NSN

5961-01-077-3256

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19315-2435418 DRAWING

908396-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

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908396-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

MFG

GENERAL DYNAMICS CANADA LTD

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM REVERSE VOLTAGE, PEAK

PRS1046

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

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PRS1046

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

MFG

OPTEK TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM REVERSE VOLTAGE, PEAK

SD-41

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

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SD-41

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM REVERSE VOLTAGE, PEAK

SM-C-867466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

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SM-C-867466

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010773258

NSN

5961-01-077-3258

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM REVERSE VOLTAGE, PEAK

2SD366

TRANSISTOR

NSN, MFG P/N

5961010773984

NSN

5961-01-077-3984

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2SD366

TRANSISTOR

NSN, MFG P/N

5961010773984

NSN

5961-01-077-3984

MFG

MATSUSHITA ELECTRIC INDUSTRIAL CO.LT D

Description

CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 4074036611
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: S0633
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 4.800 MILLIMETERS MAXIMUM
OVERALL LENGTH: 11.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

4074036611

TRANSISTOR

NSN, MFG P/N

5961010773984

NSN

5961-01-077-3984

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4074036611

TRANSISTOR

NSN, MFG P/N

5961010773984

NSN

5961-01-077-3984

MFG

TEAC CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 4074036611
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: S0633
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 4.800 MILLIMETERS MAXIMUM
OVERALL LENGTH: 11.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2SC634A

TRANSISTOR

NSN, MFG P/N

5961010773985

NSN

5961-01-077-3985

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2SC634A

TRANSISTOR

NSN, MFG P/N

5961010773985

NSN

5961-01-077-3985

MFG

SONY CORPORATION

Description

DESIGN CONTROL REFERENCE: 4872638780
MANUFACTURERS CODE: S0633
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 6.000 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.700 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 9.000 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

4872638780

TRANSISTOR

NSN, MFG P/N

5961010773985

NSN

5961-01-077-3985

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4872638780

TRANSISTOR

NSN, MFG P/N

5961010773985

NSN

5961-01-077-3985

MFG

TEAC CORPORATION

Description

DESIGN CONTROL REFERENCE: 4872638780
MANUFACTURERS CODE: S0633
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 6.000 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.700 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 9.000 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: