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5961-00-803-8394
20 Products
2N586
TRANSISTOR
NSN, MFG P/N
5961008038394
NSN
5961-00-803-8394
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2178 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1654553P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008028502
NSN
5961-00-802-8502
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N471
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008028502
NSN
5961-00-802-8502
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N471A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008028502
NSN
5961-00-802-8502
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N471A3V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008028502
NSN
5961-00-802-8502
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
8861280
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008028502
NSN
5961-00-802-8502
MFG
PICATINNY ARSENAL
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
HD6816
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008029476
NSN
5961-00-802-9476
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
DESIGN CONTROL REFERENCE: HD6816
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 73293
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N1847
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
2N1847
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.365 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
720699-109
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
720699-109
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.365 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
C36HX653
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
C36HX653
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008033083
NSN
5961-00-803-3083
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.365 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
09-34978A
SOCKET TRANSISTOR
NSN, MFG P/N
5961008033113
NSN
5961-00-803-3113
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
SOCKET TRANSISTOR
Related Searches:
09-34978A01
SOCKET TRANSISTOR
NSN, MFG P/N
5961008033113
NSN
5961-00-803-3113
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
SOCKET TRANSISTOR
Related Searches:
10065811
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034486
NSN
5961-00-803-4486
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10065811
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 6.969 INCHES NOMINAL
OVERALL WIDTH: 1.687 INCHES NOMINAL
SPECIAL FEATURES: 4 HOLE MOUNTING; ACCOMMODATES 32 DIODES
THE MANUFACTURERS DATA:
Related Searches:
10065812
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034487
NSN
5961-00-803-4487
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10065812
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 6.969 INCHES NOMINAL
OVERALL WIDTH: 1.687 INCHES NOMINAL
SPECIAL FEATURES: WILL ACCOMMODATE 32 DIODES
THE MANUFACTURERS DATA:
Related Searches:
10065813
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034488
NSN
5961-00-803-4488
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10065813
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 6.969 INCHES NOMINAL
OVERALL WIDTH: 1.687 INCHES NOMINAL
SPECIAL FEATURES: 4 HOLE MOUNTING; ACCOMMODATES 32 DIODES
THE MANUFACTURERS DATA:
Related Searches:
10065814
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034518
NSN
5961-00-803-4518
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 9.594 INCHES NOMINAL
OVERALL WIDTH: 1.687 INCHES NOMINAL
SPECIAL FEATURES: 4 HOLE MTG; ACCOMMODATES 48 DIODES
Related Searches:
10065815
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034524
NSN
5961-00-803-4524
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10065815
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 9.594 INCHES NOMINAL
OVERALL WIDTH: 1.687 INCHES NOMINAL
SPECIAL FEATURES: 4 HOLE MTG; ACCOMMODATES 48 DIODES
THE MANUFACTURERS DATA:
Related Searches:
10065816
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034528
NSN
5961-00-803-4528
10065816
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008034528
NSN
5961-00-803-4528
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MATERIAL: PLASTIC EPOXY
MOUNTING FACILITY TYPE AND QUANTITY: 4 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL LENGTH: 9.546 INCHES MINIMUM
OVERALL WIDTH: 1.688 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
UNTHREADED MOUNTING HOLE DIAMETER: 0.196 INCHES MINIMUM AND 0.206 INCHES MAXIMUM ALL MOUNTING FACILITIES
Related Searches:
107-317
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008035640
NSN
5961-00-803-5640
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.140 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN
Related Searches:
MG4911
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008035640
NSN
5961-00-803-5640
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.140 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN
