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5961-01-249-8682
20 Products
31169-504
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498682
NSN
5961-01-249-8682
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
III END ITEM IDENTIFICATION: F-15 ACFT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JAN1N6491
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499145
NSN
5961-01-249-9145
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6491
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
KS4524
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499147
NSN
5961-01-249-9147
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
SM-C-706827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499147
NSN
5961-01-249-9147
SM-C-706827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499147
NSN
5961-01-249-9147
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
2811595-1
TRANSISTOR
NSN, MFG P/N
5961012499411
NSN
5961-01-249-9411
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: F-15 ACFT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N5038
TRANSISTOR
NSN, MFG P/N
5961012499411
NSN
5961-01-249-9411
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
III END ITEM IDENTIFICATION: F-15 ACFT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2811595-3
TRANSISTOR
NSN, MFG P/N
5961012499412
NSN
5961-01-249-9412
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: F-15 ACFT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SG781R
TRANSISTOR
NSN, MFG P/N
5961012499412
NSN
5961-01-249-9412
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
III END ITEM IDENTIFICATION: F-15 ACFT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2808793-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499413
NSN
5961-01-249-9413
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: F-15 ACFT
MANUFACTURERS CODE: 55972
MFR SOURCE CONTROLLING REFERENCE: 2808793-2
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
ESJA25-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499413
NSN
5961-01-249-9413
MFG
COLLMER SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: F-15 ACFT
MANUFACTURERS CODE: 55972
MFR SOURCE CONTROLLING REFERENCE: 2808793-2
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
2808793-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499414
NSN
5961-01-249-9414
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: F-15 AIRCRAFT
MANUFACTURERS CODE: 55972
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2808793-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
ESJA25-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499414
NSN
5961-01-249-9414
MFG
COLLMER SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: F-15 AIRCRAFT
MANUFACTURERS CODE: 55972
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2808793-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
1583771-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499701
NSN
5961-01-249-9701
MFG
ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1583771
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499702
NSN
5961-01-249-9702
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1583771-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499702
NSN
5961-01-249-9702
MFG
MICROSEMI CORP-COLORADO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NH1583771-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499702
NSN
5961-01-249-9702
NH1583771-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012499702
NSN
5961-01-249-9702
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ST92045
TRANSISTOR
NSN, MFG P/N
5961012500444
NSN
5961-01-250-0444
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.
Related Searches:
FTSE110
TRANSISTOR
NSN, MFG P/N
5961012501056
NSN
5961-01-250-1056
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
912374-1
TRANSISTOR
NSN, MFG P/N
5961012501235
NSN
5961-01-250-1235
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.9 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
914614-1
TRANSISTOR
NSN, MFG P/N
5961012501587
NSN
5961-01-250-1587
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 7.5 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MINIMUM COLLECTOR-TO-
