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5961-01-208-3081
20 Products
479-1390-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012083081
NSN
5961-01-208-3081
479-1390-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012083081
NSN
5961-01-208-3081
MFG
MICRO USPD INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1901-0951
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081242
NSN
5961-01-208-1242
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 1.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
1902-0901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081243
NSN
5961-01-208-1243
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
Related Searches:
SZG30469
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081243
NSN
5961-01-208-1243
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
Related Searches:
11-02369-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081550
NSN
5961-01-208-1550
11-02369-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081550
NSN
5961-01-208-1550
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DZ771006A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081550
NSN
5961-01-208-1550
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11-14543-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081552
NSN
5961-01-208-1552
11-14543-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012081552
NSN
5961-01-208-1552
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6628-1176
TRANSISTOR
NSN, MFG P/N
5961012082062
NSN
5961-01-208-2062
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.176 INCHES MAXIMUM
OVERALL LENGTH: 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.810 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
PT4371A
TRANSISTOR
NSN, MFG P/N
5961012082062
NSN
5961-01-208-2062
MFG
CINCH CONNECTORS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.176 INCHES MAXIMUM
OVERALL LENGTH: 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.810 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SRF2815
TRANSISTOR
NSN, MFG P/N
5961012082062
NSN
5961-01-208-2062
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.176 INCHES MAXIMUM
OVERALL LENGTH: 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.810 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
20329-7
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082471
NSN
5961-01-208-2471
20329-7
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082471
NSN
5961-01-208-2471
MFG
ADDMASTER CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
712ITT221950018
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082471
NSN
5961-01-208-2471
712ITT221950018
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082471
NSN
5961-01-208-2471
MFG
ALCATEL-LUCENT NORWAY AS
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
20330-7
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082472
NSN
5961-01-208-2472
20330-7
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082472
NSN
5961-01-208-2472
MFG
ADDMASTER CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
712ITT221950033
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082472
NSN
5961-01-208-2472
712ITT221950033
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012082472
NSN
5961-01-208-2472
MFG
ALCATEL-LUCENT NORWAY AS
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
922-6131-020
DIODE
NSN, MFG P/N
5961012082566
NSN
5961-01-208-2566
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DIODE
Related Searches:
160-0320
DIODE
NSN, MFG P/N
5961012082599
NSN
5961-01-208-2599
MFG
AUTEK SYSTEMS CORP
Description
DIODE
Related Searches:
164-0433
DIODE
NSN, MFG P/N
5961012082600
NSN
5961-01-208-2600
MFG
AUTEK SYSTEMS CORP
Description
DIODE
Related Searches:
138C893H01
DIODE
NSN, MFG P/N
5961012082686
NSN
5961-01-208-2686
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DIODE
Related Searches:
CD3527
TRANSISTOR,RADIO FR
NSN, MFG P/N
5961012082691
NSN
5961-01-208-2691
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
TRANSISTOR,RADIO FR
Related Searches:
11821-501-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012083080
NSN
5961-01-208-3080
11821-501-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012083080
NSN
5961-01-208-3080
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
