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5961-01-211-2730
20 Products
10180322
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112730
NSN
5961-01-211-2730
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/156 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.02 NOMINAL REGULATOR VOLTAGE
Related Searches:
DA01-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
DA01-03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 08748-DA01 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 08748
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: DA01-03
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
RA310
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
RA310
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 08748-DA01 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 08748
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: DA01-03
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
SA5160
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
SA5160
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 08748-DA01 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 08748
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: DA01-03
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
7544125P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112606
NSN
5961-01-211-2606
7544125P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112606
NSN
5961-01-211-2606
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 810.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
Related Searches:
MB8258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112606
NSN
5961-01-211-2606
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 810.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
Related Searches:
78-5038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012112607
NSN
5961-01-211-2607
78-5038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012112607
NSN
5961-01-211-2607
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 9.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.688 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
Related Searches:
G383516-1
TRANSISTOR
NSN, MFG P/N
5961012112641
NSN
5961-01-211-2641
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3960
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/399
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/399 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AN
Related Searches:
JANTXV2N3960
TRANSISTOR
NSN, MFG P/N
5961012112641
NSN
5961-01-211-2641
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3960
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/399
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/399 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AN
Related Searches:
2N6646
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012112643
NSN
5961-01-211-2643
2N6646
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012112643
NSN
5961-01-211-2643
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 90.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 145.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT AND 160.00 AMPERES MAXIMUM DARK CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 1.417 INCHES NOMINAL
OVERALL LENGTH: 3.622 INCHES NOMINAL
OVERALL WIDTH: 0.787 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
10182278
TRANSISTOR
NSN, MFG P/N
5961012112724
NSN
5961-01-211-2724
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 10182278
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRC
Related Searches:
SP11396
TRANSISTOR
NSN, MFG P/N
5961012112724
NSN
5961-01-211-2724
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 10182278
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRC
Related Searches:
10180311
TRANSISTOR
NSN, MFG P/N
5961012112727
NSN
5961-01-211-2727
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.085 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 18876-10180311 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N5005
TRANSISTOR
NSN, MFG P/N
5961012112727
NSN
5961-01-211-2727
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.085 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 18876-10180311 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FT400A
TRANSISTOR
NSN, MFG P/N
5961012112727
NSN
5961-01-211-2727
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.085 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 18876-10180311 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
PP8090
TRANSISTOR
NSN, MFG P/N
5961012112727
NSN
5961-01-211-2727
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.085 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 18876-10180311 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
10180320
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112728
NSN
5961-01-211-2728
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.05 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2Z11806H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112728
NSN
5961-01-211-2728
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.05 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
10180317
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012112729
NSN
5961-01-211-2729
10180317
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012112729
NSN
5961-01-211-2729
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.172 INCHES NOMINAL
OVERALL LENGTH: 0.445 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0 ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
FA2554
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012112729
NSN
5961-01-211-2729
FA2554
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012112729
NSN
5961-01-211-2729
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.172 INCHES NOMINAL
OVERALL LENGTH: 0.445 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0 ALL SEMICONDUCTOR DEVICE DIODE
