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5961-01-220-8291
20 Products
1N4245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012208291
NSN
5961-01-220-8291
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1N4245
MANUFACTURERS CODE: 03508
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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1105
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209199
NSN
5961-01-220-9199
MFG
MILLER AND VAN WINKLE SPRING CO
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
S1015L
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209199
NSN
5961-01-220-9199
S1015L
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209199
NSN
5961-01-220-9199
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
772294-4
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
A2X-2199
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
FEI MICROWAVE INC
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
JANTX1N5711-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
JANTX1N5711-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
P4
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
PRO ELECTRON INC
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
QSCH-1514
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
VA-70-0088-005
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
VA-70-0088-005
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012209385
NSN
5961-01-220-9385
MFG
SELEX GALILEO LTD
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
2420007-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209633
NSN
5961-01-220-9633
MFG
WHIPP & BOURNE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
242007-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209633
NSN
5961-01-220-9633
MFG
FKI ENGINEERING LTD T/A WHIPP & BOUR NE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
52336000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209633
NSN
5961-01-220-9633
MFG
INTERNATIONAL CIRCUIT BREAKER CO DIV OF EQUUS POWER SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DMS 91111B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209633
NSN
5961-01-220-9633
DMS 91111B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209633
NSN
5961-01-220-9633
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5434
TRANSISTOR
NSN, MFG P/N
5961012209908
NSN
5961-01-220-9908
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 400.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.159 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
Related Searches:
5E4860/02-0003
TRANSISTOR
NSN, MFG P/N
5961012209908
NSN
5961-01-220-9908
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 400.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.159 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
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101KL100S15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209910
NSN
5961-01-220-9910
101KL100S15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209910
NSN
5961-01-220-9910
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 4.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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S0510LS3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209912
NSN
5961-01-220-9912
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
CURRENT RATING PER CHARACTERISTIC: 6.40 AMPERES MAXIMUM ON-STATE CURRENT, DC AND 500.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, INSTANTANEOUS AND 1.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.245 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1.6 MAXIMUM ON-STATE VOLTAGE, PEAK AND 0.2 MINIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
5E4810/53-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209913
NSN
5961-01-220-9913
5E4810/53-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209913
NSN
5961-01-220-9913
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.2 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 180.0 MAXIMUM REVERSE VOLTAGE, PEAK
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JTX1N485B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209913
NSN
5961-01-220-9913
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.2 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 180.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5E4820/07-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209914
NSN
5961-01-220-9914
5E4820/07-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209914
NSN
5961-01-220-9914
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
