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5961-01-235-7569
20 Products
11784690
TRANSISTOR
NSN, MFG P/N
5961012357569
NSN
5961-01-235-7569
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: BC184C
MANUFACTURERS CODE: 27014
OVERALL LENGTH: 0.665 INCHES NOMINAL
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
BC184C
TRANSISTOR
NSN, MFG P/N
5961012357569
NSN
5961-01-235-7569
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN CONTROL REFERENCE: BC184C
MANUFACTURERS CODE: 27014
OVERALL LENGTH: 0.665 INCHES NOMINAL
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
JANS2N4857
TRANSISTOR
NSN, MFG P/N
5961012357783
NSN
5961-01-235-7783
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS2N4857
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/385
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/385 GOVERNMENT SPECIFICATION
TERMINAL CIRCL
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A532A210-102
TRANSISTOR
NSN, MFG P/N
5961012357784
NSN
5961-01-235-7784
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS2N2222A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/255 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
T
Related Searches:
JANS2N2222A
TRANSISTOR
NSN, MFG P/N
5961012357784
NSN
5961-01-235-7784
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS2N2222A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/255 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
T
Related Searches:
JANS2N2907A
TRANSISTOR
NSN, MFG P/N
5961012357785
NSN
5961-01-235-7785
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS2N2907A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/291 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
JANS1N4938-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357787
NSN
5961-01-235-7787
JANS1N4938-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357787
NSN
5961-01-235-7787
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N4938-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 1.88 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.57 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 25.40 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTXV1N4531
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357788
NSN
5961-01-235-7788
JANTXV1N4531
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357788
NSN
5961-01-235-7788
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 125.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4531
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/116 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100
Related Searches:
JANS1N4954
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357789
NSN
5961-01-235-7789
JANS1N4954
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357789
NSN
5961-01-235-7789
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N4954
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8
Related Searches:
JANS1N5617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357790
NSN
5961-01-235-7790
JANS1N5617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012357790
NSN
5961-01-235-7790
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N5617
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/429
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/429 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIM
Related Searches:
0N947
TRANSISTOR
NSN, MFG P/N
5961012358768
NSN
5961-01-235-8768
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
Related Searches:
10085-5011
TRANSISTOR
NSN, MFG P/N
5961012358768
NSN
5961-01-235-8768
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
Related Searches:
2004085415
TRANSISTOR
NSN, MFG P/N
5961012358769
NSN
5961-01-235-8769
MFG
VIDEOTEK INC.
Description
TRANSISTOR
Related Searches:
711739-3
TRANSISTOR
NSN, MFG P/N
5961012358771
NSN
5961-01-235-8771
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
5231755100
TRANSISTOR
NSN, MFG P/N
5961012358772
NSN
5961-01-235-8772
MFG
TEAC AMERICA INC DIV DATA RECORDER DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
8-729-398-09
TRANSISTOR
NSN, MFG P/N
5961012358773
NSN
5961-01-235-8773
MFG
VIDEOTEK INC.
Description
TRANSISTOR
Related Searches:
D4128-97
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012358774
NSN
5961-01-235-8774
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: BURN IN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
SC5961-0088-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012358774
NSN
5961-01-235-8774
SC5961-0088-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012358774
NSN
5961-01-235-8774
MFG
DRS ICAS, LLC
Description
FEATURES PROVIDED: BURN IN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
UX4128-97
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012358774
NSN
5961-01-235-8774
MFG
SEMI-GENERAL INC .
Description
FEATURES PROVIDED: BURN IN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.9 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
01039-2N6116TX
TRANSISTOR
NSN, MFG P/N
5961012358888
NSN
5961-01-235-8888
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 01039-2N6116TX
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/493 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TES
