My Quote Request
No products added yet
5961-01-419-3158
20 Products
177-3298
TRANSISTOR
NSN, MFG P/N
5961014193158
NSN
5961-01-419-3158
MFG
RADIOSPARES SAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.10 AMPERES MAXIMUM DARK CURRENT
OVERALL HEIGHT: 2.1 MILLIMETERS MINIMUM AND 2.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.9 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.3 MILLIMETERS MINIMUM AND 6.7 MILLIMETERS MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRFR9014
TRANSISTOR
NSN, MFG P/N
5961014193158
NSN
5961-01-419-3158
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.10 AMPERES MAXIMUM DARK CURRENT
OVERALL HEIGHT: 2.1 MILLIMETERS MINIMUM AND 2.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.9 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.3 MILLIMETERS MINIMUM AND 6.7 MILLIMETERS MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1796840300
TRANSISTOR
NSN, MFG P/N
5961014193678
NSN
5961-01-419-3678
MFG
TEAC AMERICA INC DIV DATA RECORDER DIVISION
Description
TRANSISTOR
Related Searches:
HSMP-3831-T30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014194307
NSN
5961-01-419-4307
HSMP-3831-T30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014194307
NSN
5961-01-419-4307
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352-1598-022
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194537
NSN
5961-01-419-4537
352-1598-022
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194537
NSN
5961-01-419-4537
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III END ITEM IDENTIFICATION: JTIDS
SPECIAL FEATURES: SET INCLUDES FIVE CAPACITORS
SPECIFICATION/STANDARD DATA: 13499-676-8276-003 MANUFACTURERS SPECIFICATION
Related Searches:
332191
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014194560
NSN
5961-01-419-4560
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
353-3793-032
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194623
NSN
5961-01-419-4623
353-3793-032
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194623
NSN
5961-01-419-4623
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III END ITEM IDENTIFICATION: JTIDS
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-952-6557-001 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
DVH6731-72
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194623
NSN
5961-01-419-4623
MFG
ALPHA INDUSTRIES INC ADVANCED PRODUCTS DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III END ITEM IDENTIFICATION: JTIDS
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-952-6557-001 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MX2550
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014194623
NSN
5961-01-419-4623
MFG
AEROFLEX / METELICS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III END ITEM IDENTIFICATION: JTIDS
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-952-6557-001 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
2N907
TRANSISTOR
NSN, MFG P/N
5961014195811
NSN
5961-01-419-5811
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
IRFAE50
TRANSISTOR
NSN, MFG P/N
5961014195872
NSN
5961-01-419-5872
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
Related Searches:
171310-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014196163
NSN
5961-01-419-6163
MFG
GE AVIATION SYSTEMS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: GOLD AND SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL OPTION SILVER OR COPPER; TERMINAL SURFACE OPTION GOLD OR SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 12.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 35351-171328 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 1.5 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
NH171328-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014196163
NSN
5961-01-419-6163
NH171328-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014196163
NSN
5961-01-419-6163
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: GOLD AND SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL OPTION SILVER OR COPPER; TERMINAL SURFACE OPTION GOLD OR SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 12.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 35351-171328 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 1.5 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
2N5109A
TRANSISTOR
NSN, MFG P/N
5961014196535
NSN
5961-01-419-6535
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
Related Searches:
CIC739
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014196764
NSN
5961-01-419-6764
MFG
CALIFORNIA INSTRUMENTS CORP
Description
DESIGN CONTROL REFERENCE: CIC739
III END ITEM IDENTIFICATION: AIRCRAFT MODEL P-3 (COMMON)
MANUFACTURERS CODE: 16067
THE MANUFACTURERS DATA:
Related Searches:
2000905-001
TRANSISTOR
NSN, MFG P/N
5961014197001
NSN
5961-01-419-7001
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2000905 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 500.0 MAXIMUM COLLECTOR
Related Searches:
MJ10016HX
TRANSISTOR
NSN, MFG P/N
5961014197001
NSN
5961-01-419-7001
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 66948-2000905 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 500.0 MAXIMUM COLLECTOR
Related Searches:
1796800500
TRANSISTOR
NSN, MFG P/N
5961014197017
NSN
5961-01-419-7017
MFG
TEAC AMERICA INC DIV DATA RECORDER DIVISION
Description
TRANSISTOR
Related Searches:
JANTX1N4534
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014197018
NSN
5961-01-419-7018
JANTX1N4534
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014197018
NSN
5961-01-419-7018
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4534
III END ITEM IDENTIFICATION: PACER DAWN
MANUFACTURERS CODE: 81349
SPEC/STD CONTROLLING DATA:
Related Searches:
JANTX2N7218
TRANSISTOR
NSN, MFG P/N
5961014197854
NSN
5961-01-419-7854
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 112.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7218
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/596
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.665 INCHES MINIMUM AND 0.685 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPE
