My Quote Request
No products added yet
5961-01-244-5118
20 Products
532067-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445118
NSN
5961-01-244-5118
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
532028-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445119
NSN
5961-01-244-5119
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
532028-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445120
NSN
5961-01-244-5120
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
532012-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445121
NSN
5961-01-244-5121
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
532012-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445122
NSN
5961-01-244-5122
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
532012-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445123
NSN
5961-01-244-5123
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MIS-18698/002-01-X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445124
NSN
5961-01-244-5124
MIS-18698/002-01-X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012445124
NSN
5961-01-244-5124
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-18698/002-01-X
III END ITEM IDENTIFICATION: 1430-00-237-1834
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-MIS-18698/002-01-X DRAWING
THE MANUFACTURERS DATA:
Related Searches:
723098-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012446639
NSN
5961-01-244-6639
723098-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012446639
NSN
5961-01-244-6639
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 1 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.232 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
PIC6064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012446639
NSN
5961-01-244-6639
PIC6064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012446639
NSN
5961-01-244-6639
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 1 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.232 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
737313-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446750
NSN
5961-01-244-6750
MFG
DAGE-MTI INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MVAM115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446750
NSN
5961-01-244-6750
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
922-6100-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
922-6100-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
DKV6518B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
KV1802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
MV1401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SM-A-984899
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
SM-A-984899
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012446753
NSN
5961-01-244-6753
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
7915780-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012447027
NSN
5961-01-244-7027
7915780-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012447027
NSN
5961-01-244-7027
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: WCS-LCC
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
618-4921-060
TRANSISTOR
NSN, MFG P/N
5961012447494
NSN
5961-01-244-7494
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
JANTX2N3019
TRANSISTOR
NSN, MFG P/N
5961012447494
NSN
5961-01-244-7494
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
541103-039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012447496
NSN
5961-01-244-7496
541103-039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012447496
NSN
5961-01-244-7496
MFG
MARATHONNORCO AEROSPACE INC . DBA CHRISTIE ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
